<?xml version="1.0" encoding="UTF-8"?><?xml-stylesheet type="text/xsl" href="static/style.xsl"?><OAI-PMH xmlns="http://www.openarchives.org/OAI/2.0/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/ http://www.openarchives.org/OAI/2.0/OAI-PMH.xsd"><responseDate>2026-09-20T00:32:35Z</responseDate><request verb="GetRecord" identifier="oai:dspace.mit.edu:1721.1/77000" metadataPrefix="dim">https://dspace.mit.edu/server/oai/request</request><GetRecord><record><header><identifier>oai:dspace.mit.edu:1721.1/77000</identifier><datestamp>2022-01-13T07:54:29Z</datestamp><setSpec>com_1721.1_7582</setSpec><setSpec>com_1721.1_7581</setSpec><setSpec>col_1721.1_131023</setSpec></header><metadata><dim:dim xmlns:dim="http://www.dspace.org/xmlns/dspace/dim" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns:doc="http://www.lyncode.com/xoai" xsi:schemaLocation="http://www.dspace.org/xmlns/dspace/dim http://www.dspace.org/schema/dim.xsd">
   <dim:field mdschema="dc" element="contributor" qualifier="advisor" lang="en_US">Aleksandar Kojic and James K. Roberge.</dim:field>
   <dim:field mdschema="dc" element="contributor" qualifier="author" lang="en_US">Wang, Xiawa</dim:field>
   <dim:field mdschema="dc" element="contributor" qualifier="other" lang="en_US">Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.</dim:field>
   <dim:field mdschema="dc" element="contributor" qualifier="department">Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science</dim:field>
   <dim:field mdschema="dc" element="date" qualifier="accessioned">2013-02-14T15:36:51Z</dim:field>
   <dim:field mdschema="dc" element="date" qualifier="available">2013-02-14T15:36:51Z</dim:field>
   <dim:field mdschema="dc" element="date" qualifier="issued" lang="en_US">2012</dim:field>
   <dim:field mdschema="dc" element="identifier" qualifier="uri">http://hdl.handle.net/1721.1/77000</dim:field>
   <dim:field mdschema="dc" element="identifier" qualifier="oclc" lang="en_US">825558250</dim:field>
   <dim:field mdschema="dc" element="description" lang="en_US">Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, February 2012.</dim:field>
   <dim:field mdschema="dc" element="description" lang="en_US">"February 2011." Cataloged from PDF version of thesis.</dim:field>
   <dim:field mdschema="dc" element="description" lang="en_US">Includes bibliographical references (p. 77-81).</dim:field>
   <dim:field mdschema="dc" element="description" qualifier="abstract" lang="en_US">This thesis presents the measurement techniques and results of low-frequency noise for atomic-layer-deposition Pt films. Atomic-layer-deposition has been developed as an approach to make ultra-thin and conformal films. It has been employed to make detectors of bolometers. 1/f noise is a fundamental limit to the resolution. The experiments are designed to characterize the 1/f noise of the ALD fabricated Pt films. The measurement results show that for 7nm and 13nm ALD fabricated Pt films, 1/f noise is about two orders of magnitude larger than reported for continuous Pt films in literature. The thin film is also very likely to suffer from electromigration damage.</dim:field>
   <dim:field mdschema="dc" element="description" qualifier="statementofresponsibility" lang="en_US">by Xiawa Wang.</dim:field>
   <dim:field mdschema="dc" element="description" qualifier="degree" lang="en_US">M.Eng.</dim:field>
   <dim:field mdschema="dc" element="format" qualifier="extent" lang="en_US">81 p.</dim:field>
   <dim:field mdschema="dc" element="language" qualifier="iso" lang="en_US">eng</dim:field>
   <dim:field mdschema="dc" element="publisher" lang="en_US">Massachusetts Institute of Technology</dim:field>
   <dim:field mdschema="dc" element="rights" lang="en_US">M.I.T. theses are protected by 
copyright. They may be viewed from this source for any purpose, but 
reproduction or distribution in any format is prohibited without written 
permission. See provided URL for inquiries about permission.</dim:field>
   <dim:field mdschema="dc" element="rights" qualifier="uri" lang="en_US">http://dspace.mit.edu/handle/1721.1/7582</dim:field>
   <dim:field mdschema="dc" element="subject" lang="en_US">Electrical Engineering and Computer Science.</dim:field>
   <dim:field mdschema="dc" element="title" lang="en_US">On the 1/f noise of atomic-layer-deposition metal films</dim:field>
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   	&lt;Title>On the 1/f noise of atomic-layer-deposition metal films&lt;/Title>
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   	&lt;PublicationDate>2012&lt;/PublicationDate>
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        	&lt;DisplayName&gt;Wang, Xiawa&lt;/DisplayName>
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    &lt;Keyword>Electrical Engineering and Computer Science.&lt;/Keyword>
   	&lt;Abstract>This thesis presents the measurement techniques and results of low-frequency noise for atomic-layer-deposition Pt films. Atomic-layer-deposition has been developed as an approach to make ultra-thin and conformal films. It has been employed to make detectors of bolometers. 1/f noise is a fundamental limit to the resolution. The experiments are designed to characterize the 1/f noise of the ALD fabricated Pt films. The measurement results show that for 7nm and 13nm ALD fabricated Pt films, 1/f noise is about two orders of magnitude larger than reported for continuous Pt films in literature. The thin film is also very likely to suffer from electromigration damage.&lt;/Abstract>
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