2026-09-20T21:57:02Zhttps://dspace.mit.edu/server/oai/requestoai:dspace.mit.edu:1721.1/823842022-01-13T07:54:01Zcom_1721.1_7582com_1721.1_7581col_1721.1_131023
Jing Kong.
Song, Yi, Ph. D. Massachusetts Institute of Technology
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science.
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
2013-11-18T19:16:29Z
2013-11-18T19:16:29Z
2013
2013
http://hdl.handle.net/1721.1/82384
862075472
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2013.
Title as it appears in MIT Commencement Exercises program, June 2013: Iron Chloride doping of CVD graphene for transparent electrodes. Cataloged from PDF version of thesis.
Includes bibliographical references (p. 39-40).
Chemical doping is an effective method of reducing the sheet resistance of graphene. This thesis aims to develop an effective method of doping large area Chemical Vapor Deposition (CVD) graphene using Iron (III) Chloride (FeCl 3). It is shown that evaporating FeCl3 can increase the carrier concentration of monolayer graphene to greater than 7x1 0 3CM2 and achieve resistances as low 72[Omega]/sq. We also evaluate other important properties of the doped graphene such as surface cleanliness, air stability, and solvent stability. Furthermore, we compare FeCl3 to three other common dopants: Gold (III) Chloride (AuCl3), Nitric Acid (I-N0 3), and TFSA ((CF 3SO2)2NH). We show that compared to these dopants, FeCl3 can not only achieve better sheet resistance but also has other key advantages including better solvent stability and better heat stability.
by Yi Song.
S.M.
40 p.
eng
Massachusetts Institute of Technology
M.I.T. theses are protected by
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http://dspace.mit.edu/handle/1721.1/7582
Electrical Engineering and Computer Science.
Iron (III) Chloride doping of large-area chemical vapor deposition graphene
Iron Chloride doping of CVD graphene for transparent electrodes
Thesis
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Publication
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<Abstract>Chemical doping is an effective method of reducing the sheet resistance of graphene. This thesis aims to develop an effective method of doping large area Chemical Vapor Deposition (CVD) graphene using Iron (III) Chloride (FeCl 3). It is shown that evaporating FeCl3 can increase the carrier concentration of monolayer graphene to greater than 7x1 0 3CM2 and achieve resistances as low 72[Omega]/sq. We also evaluate other important properties of the doped graphene such as surface cleanliness, air stability, and solvent stability. Furthermore, we compare FeCl3 to three other common dopants: Gold (III) Chloride (AuCl3), Nitric Acid (I-N0 3), and TFSA ((CF 3SO2)2NH). We show that compared to these dopants, FeCl3 can not only achieve better sheet resistance but also has other key advantages including better solvent stability and better heat stability.</Abstract>
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