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Dimitri A. Antoniadis. Radhakrishna, Ujwal Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science. Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science 2013-11-18T19:17:47Z 2013-11-18T19:17:47Z 2013 2013 http://hdl.handle.net/1721.1/82394 862079474 Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2013. Cataloged from PDF version of thesis. Includes bibliographical references (p. 81-84). Gallium Nitride (GaN)-based high electron mobility transistors (HEMTs) are rapidly emerging as front-runners in high-power mm-wave circuit applications. For circuit design with current devices and to allow sensible future performance projections from device engineering in such a rapidly evolving technology, compact device models are essential. In this thesis, a physics-based compact model is developed for short channel GaN HEMTs. The model is based on the concept of virtual source (VS) transport originally developed for scaled silicon field effect transistors. Self-consistent current and charge expressions in the model require very few parameters. The parameters have straightforward physical meanings and can be extracted through independent measurements. The model is implemented in Verilog-A and is compatible with state of the art circuit simulators. The new model is calibrated and validated with experimental DC I-V and S-parameter measurements of fabricated devices. Using the model, a projection of cut-off frequency (f-[tau]) of GaN-based HEMTs with scaling is performed to highlight performance bottlenecks. by Ujwal Radhakrishna. S.M. 84 p. eng Massachusetts Institute of Technology M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. http://dspace.mit.edu/handle/1721.1/7582 Electrical Engineering and Computer Science. A compact transport and charge model for GaN-based high electron mobility transistors for RF applications Compact transport and charge model for Gallium Nitride-based HEMTs for radio-frequency applications Thesis application/pdf false Publication unknown unknown <Publication xmlns="https://www.openaire.eu/cerif-profile/1.1/" id="9ffdc73b-b253-4f80-9d29-a34643bc9ffa"> <Type xmlns="https://www.openaire.eu/cerif-profile/vocab/COAR_Publication_Types">http://purl.org/coar/resource_type/c_1843</Type> <Language>eng</Language> <Title>A compact transport and charge model for GaN-based high electron mobility transistors for RF applications</Title> <Subtitle>Compact transport and charge model for Gallium Nitride-based HEMTs for radio-frequency applications</Subtitle> <PublishedIn> <Publication> </Publication> </PublishedIn> <PublicationDate>2013</PublicationDate> <Authors> <Author> <DisplayName>Radhakrishna, Ujwal</DisplayName> <Affiliation> <OrgUnit> </OrgUnit> </Affiliation> </Author> </Authors> <Editors> </Editors> <Publishers> <Publisher> <DisplayName>Massachusetts Institute of Technology</DisplayName> <OrgUnit /> </Publisher> </Publishers> <License>http://dspace.mit.edu/handle/1721.1/7582</License> <Keyword>Electrical Engineering and Computer Science.</Keyword> <Abstract>Gallium Nitride (GaN)-based high electron mobility transistors (HEMTs) are rapidly emerging as front-runners in high-power mm-wave circuit applications. For circuit design with current devices and to allow sensible future performance projections from device engineering in such a rapidly evolving technology, compact device models are essential. In this thesis, a physics-based compact model is developed for short channel GaN HEMTs. The model is based on the concept of virtual source (VS) transport originally developed for scaled silicon field effect transistors. Self-consistent current and charge expressions in the model require very few parameters. The parameters have straightforward physical meanings and can be extracted through independent measurements. The model is implemented in Verilog-A and is compatible with state of the art circuit simulators. The new model is calibrated and validated with experimental DC I-V and S-parameter measurements of fabricated devices. Using the model, a projection of cut-off frequency (f-[tau]) of GaN-based HEMTs with scaling is performed to highlight performance bottlenecks.</Abstract> <Access xmlns="http://purl.org/coar/access_right" > </Access> </Publication>