2026-09-22T00:45:30Zhttps://dspace.mit.edu/server/oai/requestoai:dspace.mit.edu:1721.1/843892022-01-13T07:54:07Zcom_1721.1_7582com_1721.1_7581col_1721.1_131024
Marc A. Kastner.
Easley, Justin Lavaughn
Massachusetts Institute of Technology. Department of Physics.
Massachusetts Institute of Technology. Department of Physics
2014-01-23T18:40:49Z
2014-01-23T18:40:49Z
2013
http://hdl.handle.net/1721.1/84389
867649970
Thesis (S.B.)--Massachusetts Institute of Technology, Dept. of Physics, 2013.
Cataloged from PDF version of thesis.
Includes bibliographical references (page 31).
In this thesis, I fabricated and tested p-channel dual gate MOSFETs that will be used to make conductance and resistance measurements of nanocrystalline solids. Using MOSFETs with narrow gates, we can measure the resistance of these nanocrystals, which are typically extremely high. The group had previously used n-channel MOSFETs, and this project tests the potential for using p-channel devices. This thesis discusses the fabrication techniques and challenges, as well as G-Vg, threshold voltage, and hole mobility measurements from wide gate devices, which are used as a proof of concept for the narrow gate devices. Future work in the group will finish fabricating and testing narrow gate devices.
by Justin Lavaughn Easley.
S.B.
31 pages
eng
Massachusetts Institute of Technology
M.I.T. theses are protected by
copyright. They may be viewed from this source for any purpose, but
reproduction or distribution in any format is prohibited without written
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http://dspace.mit.edu/handle/1721.1/7582
Physics.
Fabrication and testing of dual gate p-channel MOSFETs
Thesis
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