2026-09-18T20:26:56Zhttps://dspace.mit.edu/server/oai/requestoai:dspace.mit.edu:1721.1/84612022-01-13T07:54:33Zcom_1721.1_7582com_1721.1_7581col_1721.1_131023
Caroline A. Ross.
Hernandez, Allison, 1979-
Massachusetts Institute of Technology. Dept. of Materials Science and Engineering.
Massachusetts Institute of Technology. Department of Materials Science and Engineering
2005-08-23T20:21:46Z
2005-08-23T20:21:46Z
2002
2002
http://hdl.handle.net/1721.1/8461
50680235
Thesis (M.Eng.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2002.
Includes bibliographical references (p. 45-47).
Magnetic Random Access Memory (MRAM) is considered to be the most viable option for nonvolatile memory in the computer industry. This need for nonvolatile computer memory has resulted in the dramatic evolution of MRAM technology in the past ten years. Currently in the latter stages of development, emphasis is being put on experiments concerning optimization of density and reduction of the switching fields of the magnetic elements. Applications of MRAM technology are currently being explored by companies who seek to obtain relevant intellectual property in those areas. Once research is completed, companies must create a business plan that recognizes the initial, breakthrough markets and implement technology integration accordingly.
by Allison Hernandez.
M.Eng.
47 p.
3824053 bytes
3823812 bytes
application/pdf
application/pdf
eng
Massachusetts Institute of Technology
M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.
http://dspace.mit.edu/handle/1721.1/7582
Materials Science and Engineering.
Analysis of magnetic random access memory applications
Analysis of MRAM applications
Thesis
application/pdf
Publication
unknown
unknown
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