<?xml version="1.0" encoding="UTF-8"?><?xml-stylesheet type="text/xsl" href="static/style.xsl"?><OAI-PMH xmlns="http://www.openarchives.org/OAI/2.0/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/ http://www.openarchives.org/OAI/2.0/OAI-PMH.xsd"><responseDate>2026-09-18T18:53:34Z</responseDate><request verb="GetRecord" identifier="oai:dspace.mit.edu:1721.1/85227" metadataPrefix="dim">https://dspace.mit.edu/server/oai/request</request><GetRecord><record><header><identifier>oai:dspace.mit.edu:1721.1/85227</identifier><datestamp>2026-06-06T00:56:20Z</datestamp><setSpec>com_1721.1_7582</setSpec><setSpec>com_1721.1_7581</setSpec><setSpec>col_1721.1_131023</setSpec></header><metadata><dim:dim xmlns:dim="http://www.dspace.org/xmlns/dspace/dim" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns:doc="http://www.lyncode.com/xoai" xsi:schemaLocation="http://www.dspace.org/xmlns/dspace/dim http://www.dspace.org/schema/dim.xsd">
   <dim:field mdschema="dc" element="contributor" qualifier="advisor" lang="en_US">Eric A. Dauler and Jeffrey H. Shapiro.</dim:field>
   <dim:field mdschema="dc" element="contributor" qualifier="author" lang="en_US">Steinbrecher, Gregory R</dim:field>
   <dim:field mdschema="dc" element="contributor" qualifier="other" lang="en_US">Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science.</dim:field>
   <dim:field mdschema="dc" element="contributor" qualifier="department">Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science</dim:field>
   <dim:field mdschema="dc" element="date" qualifier="accessioned">2014-03-05T15:56:29Z</dim:field>
   <dim:field mdschema="dc" element="date" qualifier="available">2014-03-05T15:56:29Z</dim:field>
   <dim:field mdschema="dc" element="date" qualifier="copyright" lang="en_US">2013</dim:field>
   <dim:field mdschema="dc" element="date" qualifier="issued" lang="en_US">2013</dim:field>
   <dim:field mdschema="dc" element="identifier" qualifier="uri">http://hdl.handle.net/1721.1/85227</dim:field>
   <dim:field mdschema="dc" element="identifier" qualifier="oclc" lang="en_US">871004207</dim:field>
   <dim:field mdschema="dc" element="description" lang="en_US">Thesis: M. Eng., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2013.</dim:field>
   <dim:field mdschema="dc" element="description" lang="en_US">This electronic version was submitted by the student author.  The certified thesis is available in the Institute Archives and Special Collections.</dim:field>
   <dim:field mdschema="dc" element="description" lang="en_US">Cataloged from student-submitted PDF version of thesis.</dim:field>
   <dim:field mdschema="dc" element="description" lang="en_US">Includes bibliographical references (pages 75-78).</dim:field>
   <dim:field mdschema="dc" element="description" qualifier="abstract" lang="en_US">This thesis presents work towards engineering and characterizing epitaxial Indium Arsenide (InAs) quantum dots as single photon sources in the optical communications C-Band (Conventional Band; 1535 nm-1565 nm wavelength). First, the underlying theory of semiconductor quantum dots and the necessary tools from quantum optics are reviewed. Next, a detailed description is given of the experimental system design, along with an overview of the design and implementation process of a cryogenic scanning laser confocal microscope. Then, the quantum dot growth process is presented along with the results of measurements on early quantum dot samples, which suggested that the initial growth process needed to be refined. We present efforts towards improving the growth process and measurements of quantum dot samples resulting from this new process.</dim:field>
   <dim:field mdschema="dc" element="description" qualifier="statementofresponsibility" lang="en_US">by Gregory R. Steinbrecher.</dim:field>
   <dim:field mdschema="dc" element="description" qualifier="degree" lang="en_US">M.Eng.</dim:field>
   <dim:field mdschema="dc" element="format" qualifier="extent" lang="en_US">78 pages</dim:field>
   <dim:field mdschema="dc" element="language" qualifier="iso" lang="en_US">eng</dim:field>
   <dim:field mdschema="dc" element="publisher" lang="en_US">Massachusetts Institute of Technology</dim:field>
   <dim:field mdschema="dc" element="rights" lang="en_US">M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.</dim:field>
   <dim:field mdschema="dc" element="rights" qualifier="uri" lang="en_US">http://dspace.mit.edu/handle/1721.1/7582</dim:field>
   <dim:field mdschema="dc" element="subject" lang="en_US">Electrical Engineering and Computer Science.</dim:field>
   <dim:field mdschema="dc" element="title" lang="en_US">Indium arsenide quantum dots for single photons in the communications band</dim:field>
   <dim:field mdschema="dc" element="type" lang="en_US">Thesis</dim:field>
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   	&lt;Title>Indium arsenide quantum dots for single photons in the communications band&lt;/Title>
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   	&lt;PublicationDate>2013&lt;/PublicationDate>
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        	&lt;DisplayName>Steinbrecher, Gregory R&lt;/DisplayName>
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    &lt;Keyword>Electrical Engineering and Computer Science.&lt;/Keyword&gt;
   	&lt;Abstract>This thesis presents work towards engineering and characterizing epitaxial Indium Arsenide (InAs) quantum dots as single photon sources in the optical communications C-Band (Conventional Band; 1535 nm-1565 nm wavelength). First, the underlying theory of semiconductor quantum dots and the necessary tools from quantum optics are reviewed. Next, a detailed description is given of the experimental system design, along with an overview of the design and implementation process of a cryogenic scanning laser confocal microscope. Then, the quantum dot growth process is presented along with the results of measurements on early quantum dot samples, which suggested that the initial growth process needed to be refined. We present efforts towards improving the growth process and measurements of quantum dot samples resulting from this new process.&lt;/Abstract>
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