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   <dim:field mdschema="dc" element="contributor" qualifier="advisor" lang="en_US">S. Mark Spearing.</dim:field>
   <dim:field mdschema="dc" element="contributor" qualifier="author" lang="en_US">Turner, Kevin Thomas, 1977-</dim:field>
   <dim:field mdschema="dc" element="contributor" qualifier="other" lang="en_US">Massachusetts Institute of Technology. Dept. of Mechanical Engineering.</dim:field>
   <dim:field mdschema="dc" element="contributor" qualifier="department">Massachusetts Institute of Technology. Department of Mechanical Engineering</dim:field>
   <dim:field mdschema="dc" element="date" qualifier="accessioned">2005-08-23T21:12:16Z</dim:field>
   <dim:field mdschema="dc" element="date" qualifier="available">2005-08-23T21:12:16Z</dim:field>
   <dim:field mdschema="dc" element="date" qualifier="copyright" lang="en_US">2001</dim:field>
   <dim:field mdschema="dc" element="date" qualifier="issued" lang="en_US">2001</dim:field>
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   <dim:field mdschema="dc" element="identifier" qualifier="oclc" lang="en_US">49038661</dim:field>
   <dim:field mdschema="dc" element="description" lang="en_US">Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Mechanical Engineering, 2001.</dim:field>
   <dim:field mdschema="dc" element="description" lang="en_US">Includes bibliographical references (p. 121-127).</dim:field>
   <dim:field mdschema="dc" element="description" qualifier="abstract" lang="en_US">Microhydraulics transducers (MHT) are a class of microelectromechanical systems (MEMS) currently being developed to produce bi-directional transducers with high power densities (500-1000 W/kg). The development of these devices, which combine microfabrication technology and piezoelectric materials, requires the use of variety of materials and fabrication technologies that are not fully developed. Three materials and structures issues, which are essential to the development of MHT devices, are silicon wafer bonding, strength of silicon-on- insulator (SOI) membranes, and gold-tin bonding. Each of these topics was addressed independently. The mechanical integrity of silicon fusion bonds as a function of processing parameters was examined using a four-point bend delamination specimen. The study showed that the specimen was effective for characterizing low toughness bonds and that certain processing conditions can have a profound impact on bond toughness. Bond toughness increased with anneal time and temperature, but, initial contacting conditions, such as time and clamping pressure, proved to have little effect on final bond toughness. The fracture strength of membranes fabricated from SOI wafers using deep reactive ion etching was experimentally measured. Results showed that the strengths of these membranes was less than that of structures etched from bulk silicon and that the strength was dependent on SOI manufacturer. Finally, a thin film gold-tin solder bond was developed to bond bulk piezoelectric material to silicon structures. The process, which uses a sputtered gold-tin eutectic alloy (80wt%Au-20wt%Sn), was refined to produce void-free bonds. Preliminary tensile tests indicated failure was likely to occur in the piezoelectric material itself or along the solder-piezoelectric material interface. The results of these three studies provide information that is essential to the development of MHT devices as well as a wide range of MEMS devices.</dim:field>
   <dim:field mdschema="dc" element="description" qualifier="statementofresponsibility" lang="en_US">by Kevin Thomas Turner.</dim:field>
   <dim:field mdschema="dc" element="description" qualifier="degree" lang="en_US">S.M.</dim:field>
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   <dim:field mdschema="dc" element="publisher" lang="en_US">Massachusetts Institute of Technology</dim:field>
   <dim:field mdschema="dc" element="rights" lang="en_US">M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.</dim:field>
   <dim:field mdschema="dc" element="rights" qualifier="uri">http://dspace.mit.edu/handle/1721.1/7582</dim:field>
   <dim:field mdschema="dc" element="subject" lang="en_US">Mechanical Engineering.</dim:field>
   <dim:field mdschema="dc" element="title" lang="en_US">An evaluation of critical issues for microhydraulic transducers : silicon wafer bonding, strength of silicon on insulator membranes and gold-tin solder bonding</dim:field>
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   	&lt;Title>An evaluation of critical issues for microhydraulic transducers : silicon wafer bonding, strength of silicon on insulator membranes and gold-tin solder bonding&lt;/Title>
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   	&lt;PublicationDate>2001&lt;/PublicationDate>
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   	&lt;Abstract>Microhydraulics transducers (MHT) are a class of microelectromechanical systems (MEMS) currently being developed to produce bi-directional transducers with high power densities (500-1000 W/kg). The development of these devices, which combine microfabrication technology and piezoelectric materials, requires the use of variety of materials and fabrication technologies that are not fully developed. Three materials and structures issues, which are essential to the development of MHT devices, are silicon wafer bonding, strength of silicon-on- insulator (SOI) membranes, and gold-tin bonding. Each of these topics was addressed independently. The mechanical integrity of silicon fusion bonds as a function of processing parameters was examined using a four-point bend delamination specimen. The study showed that the specimen was effective for characterizing low toughness bonds and that certain processing conditions can have a profound impact on bond toughness. Bond toughness increased with anneal time and temperature, but, initial contacting conditions, such as time and clamping pressure, proved to have little effect on final bond toughness. The fracture strength of membranes fabricated from SOI wafers using deep reactive ion etching was experimentally measured. Results showed that the strengths of these membranes was less than that of structures etched from bulk silicon and that the strength was dependent on SOI manufacturer. Finally, a thin film gold-tin solder bond was developed to bond bulk piezoelectric material to silicon structures. The process, which uses a sputtered gold-tin eutectic alloy (80wt%Au-20wt%Sn), was refined to produce void-free bonds. Preliminary tensile tests indicated failure was likely to occur in the piezoelectric material itself or along the solder-piezoelectric material interface. The results of these three studies provide information that is essential to the development of MHT devices as well as a wide range of MEMS devices.&lt;/Abstract>
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