<?xml version="1.0" encoding="UTF-8"?><?xml-stylesheet type="text/xsl" href="static/style.xsl"?><OAI-PMH xmlns="http://www.openarchives.org/OAI/2.0/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/ http://www.openarchives.org/OAI/2.0/OAI-PMH.xsd"><responseDate>2026-09-25T18:58:00Z</responseDate><request verb="GetRecord" identifier="oai:dspace.mit.edu:1721.1/8782" metadataPrefix="dim">https://dspace.mit.edu/server/oai/request</request><GetRecord><record><header><identifier>oai:dspace.mit.edu:1721.1/8782</identifier><datestamp>2022-01-13T07:54:33Z</datestamp><setSpec>com_1721.1_7582</setSpec><setSpec>com_1721.1_7581</setSpec><setSpec>col_1721.1_131022</setSpec></header><metadata><dim:dim xmlns:dim="http://www.dspace.org/xmlns/dspace/dim" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns:doc="http://www.lyncode.com/xoai" xsi:schemaLocation="http://www.dspace.org/xmlns/dspace/dim http://www.dspace.org/schema/dim.xsd">
   <dim:field mdschema="dc" element="contributor" qualifier="advisor" lang="en_US">Lionel Cooper Kimerling.</dim:field>
   <dim:field mdschema="dc" element="contributor" qualifier="author" lang="en_US">Luan Hsin-Chiao, 1969-</dim:field>
   <dim:field mdschema="dc" element="contributor" qualifier="other" lang="en_US">Massachusetts Institute of Technology. Dept. of Materials Science and Engineering.</dim:field>
   <dim:field mdschema="dc" element="contributor" qualifier="department">Massachusetts Institute of Technology. Department of Materials Science and Engineering</dim:field>
   <dim:field mdschema="dc" element="date" qualifier="accessioned">2005-08-23T15:17:16Z</dim:field>
   <dim:field mdschema="dc" element="date" qualifier="available">2005-08-23T15:17:16Z</dim:field>
   <dim:field mdschema="dc" element="date" qualifier="copyright" lang="en_US">2001</dim:field>
   <dim:field mdschema="dc" element="date" qualifier="issued" lang="en_US">2001</dim:field>
   <dim:field mdschema="dc" element="identifier" qualifier="uri">http://hdl.handle.net/1721.1/8782</dim:field>
   <dim:field mdschema="dc" element="identifier" qualifier="oclc" lang="en_US">48171997</dim:field>
   <dim:field mdschema="dc" element="description" lang="en_US">Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2001.</dim:field>
   <dim:field mdschema="dc" element="description" lang="en_US">Includes bibliographical references (p. 143-157).</dim:field>
   <dim:field mdschema="dc" element="description" qualifier="abstract" lang="en_US">This thesis demonstrates the integration of pure Ge near-infrared photodetectors on Si. Ge epilayers were grown directly on Si by a two-step ultra-high-vacuum/chemical-vapor-deposition (UHV/CVD) process. This work conclusively proves that threading-dislocation densities in the Ge epilayers, measured both by plan-view transmission electron microscopy and etch-pit-density (EPD) counting, were reduced by cyclic thermal annealing. Additionally, Ge mesas with no threading dislocations as measured by EPD were also demonstrated. The removal of threading-dislocations can be attributed to the thermal stress induced dislocation glide and reactions. Using the annealed Ge epilayers grown on Si, p-i-n Ge photodetectors with maximum responsivities of 770 mA/W at 1.3 μm were fabricated. Finally, to allow the integration of Ge epilayers in Si microelectronic processing, the protection and passivation of Ge was investigated. The passivation was provided by the oxidation of Si epilayers grown on Ge. Capacitance-voltage characteristics of metal-oxide-semiconductor devices demonstrated the high quality of the passivation with the measured interface state density of 4 x 1011 cm-2eV- 1.</dim:field>
   <dim:field mdschema="dc" element="description" qualifier="statementofresponsibility" lang="en_US">by Hsin-Chiao Luan.</dim:field>
   <dim:field mdschema="dc" element="description" qualifier="degree" lang="en_US">Ph.D.</dim:field>
   <dim:field mdschema="dc" element="format" qualifier="extent" lang="en_US">157 p.</dim:field>
   <dim:field mdschema="dc" element="format" qualifier="extent">14362909 bytes</dim:field>
   <dim:field mdschema="dc" element="format" qualifier="extent">14362668 bytes</dim:field>
   <dim:field mdschema="dc" element="format" qualifier="mimetype">application/pdf</dim:field>
   <dim:field mdschema="dc" element="format" qualifier="mimetype">application/pdf</dim:field>
   <dim:field mdschema="dc" element="language" qualifier="iso" lang="en_US">eng</dim:field>
   <dim:field mdschema="dc" element="publisher" lang="en_US">Massachusetts Institute of Technology</dim:field>
   <dim:field mdschema="dc" element="rights" lang="en_US">M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.</dim:field>
   <dim:field mdschema="dc" element="rights" qualifier="uri">http://dspace.mit.edu/handle/1721.1/7582</dim:field>
   <dim:field mdschema="dc" element="subject" lang="en_US">Materials Science and Engineering.</dim:field>
   <dim:field mdschema="dc" element="title" lang="en_US">Ge photodetectors for Si microphotonics</dim:field>
   <dim:field mdschema="dc" element="type" lang="en_US">Thesis</dim:field>
   <dim:field mdschema="dc" element="format" qualifier="mimetype">application/pdf</dim:field>
   <dim:field mdschema="dspace" element="authorsordered">false</dim:field>
   <dim:field mdschema="dspace" element="entity" qualifier="type">Publication</dim:field>
   <dim:field mdschema="others" element="access-status">unknown</dim:field>
   <dim:field mdschema="others" element="access-status">unknown</dim:field>
   <dim:field mdschema="cerif" element="openaire" authority="" confidence="-1">&lt;Publication xmlns="https://www.openaire.eu/cerif-profile/1.1/" id="8d5d4b84-9170-4e79-b6fc-db30ae339241">
	&lt;Type xmlns="https://www.openaire.eu/cerif-profile/vocab/COAR_Publication_Types">http://purl.org/coar/resource_type/c_1843&lt;/Type>
	&lt;Language>eng&lt;/Language>
   	&lt;Title>Ge photodetectors for Si microphotonics&lt;/Title>
   	&lt;PublishedIn>
    	&lt;Publication>
      	&lt;/Publication>
   	&lt;/PublishedIn>
   	&lt;PublicationDate>2001&lt;/PublicationDate>
   	&lt;Authors>
      	&lt;Author>
        	&lt;DisplayName>Luan Hsin-Chiao, 1969-&lt;/DisplayName>
         	&lt;Affiliation>
         		&lt;OrgUnit>
         		&lt;/OrgUnit>
         	&lt;/Affiliation>
      	&lt;/Author>
	&lt;/Authors>
   	&lt;Editors>
	&lt;/Editors>
    &lt;Publishers>
        &lt;Publisher>
            &lt;DisplayName>Massachusetts Institute of Technology&lt;/DisplayName>
            &lt;OrgUnit />
        &lt;/Publisher>
    &lt;/Publishers>
    &lt;License>http://dspace.mit.edu/handle/1721.1/7582&lt;/License>
    &lt;Keyword>Materials Science and Engineering.&lt;/Keyword>
   	&lt;Abstract>This thesis demonstrates the integration of pure Ge near-infrared photodetectors on Si. Ge epilayers were grown directly on Si by a two-step ultra-high-vacuum/chemical-vapor-deposition (UHV/CVD) process. This work conclusively proves that threading-dislocation densities in the Ge epilayers, measured both by plan-view transmission electron microscopy and etch-pit-density (EPD) counting, were reduced by cyclic thermal annealing. Additionally, Ge mesas with no threading dislocations as measured by EPD were also demonstrated. The removal of threading-dislocations can be attributed to the thermal stress induced dislocation glide and reactions. Using the annealed Ge epilayers grown on Si, p-i-n Ge photodetectors with maximum responsivities of 770 mA/W at 1.3 μm were fabricated. Finally, to allow the integration of Ge epilayers in Si microelectronic processing, the protection and passivation of Ge was investigated. The passivation was provided by the oxidation of Si epilayers grown on Ge. Capacitance-voltage characteristics of metal-oxide-semiconductor devices demonstrated the high quality of the passivation with the measured interface state density of 4 x 1011 cm-2eV- 1.&lt;/Abstract>
	&lt;Access xmlns="http://purl.org/coar/access_right" 
    >
    &lt;/Access>
&lt;/Publication>
</dim:field>
</dim:dim>
</metadata></record></GetRecord></OAI-PMH>