<?xml version="1.0" encoding="UTF-8"?><?xml-stylesheet type="text/xsl" href="static/style.xsl"?><OAI-PMH xmlns="http://www.openarchives.org/OAI/2.0/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/ http://www.openarchives.org/OAI/2.0/OAI-PMH.xsd"><responseDate>2026-09-19T09:25:57Z</responseDate><request verb="GetRecord" identifier="oai:dspace.mit.edu:1721.1/87939" metadataPrefix="dim">https://dspace.mit.edu/server/oai/request</request><GetRecord><record><header><identifier>oai:dspace.mit.edu:1721.1/87939</identifier><datestamp>2021-07-05T14:03:20Z</datestamp><setSpec>com_1721.1_7582</setSpec><setSpec>com_1721.1_7581</setSpec><setSpec>col_1721.1_131023</setSpec></header><metadata><dim:dim xmlns:dim="http://www.dspace.org/xmlns/dspace/dim" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns:doc="http://www.lyncode.com/xoai" xsi:schemaLocation="http://www.dspace.org/xmlns/dspace/dim http://www.dspace.org/schema/dim.xsd">
   <dim:field mdschema="dc" element="contributor" qualifier="advisor" lang="en_US">Hae-Seung Lee.</dim:field>
   <dim:field mdschema="dc" element="contributor" qualifier="author" lang="en_US">Yang, Xi, Ph. D. Massachusetts Institute of Technology</dim:field>
   <dim:field mdschema="dc" element="contributor" qualifier="other" lang="en_US">Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science.</dim:field>
   <dim:field mdschema="dc" element="contributor" qualifier="department" lang="en_US">Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science</dim:field>
   <dim:field mdschema="dc" element="date" qualifier="accessioned">2014-06-13T22:34:38Z</dim:field>
   <dim:field mdschema="dc" element="date" qualifier="available">2014-06-13T22:34:38Z</dim:field>
   <dim:field mdschema="dc" element="date" qualifier="copyright" lang="en_US">2014</dim:field>
   <dim:field mdschema="dc" element="date" qualifier="issued" lang="en_US">2014</dim:field>
   <dim:field mdschema="dc" element="identifier" qualifier="uri">http://hdl.handle.net/1721.1/87939</dim:field>
   <dim:field mdschema="dc" element="identifier" qualifier="oclc" lang="en_US">880166778</dim:field>
   <dim:field mdschema="dc" element="description" lang="en_US">Thesis: S.M., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2014.</dim:field>
   <dim:field mdschema="dc" element="description" lang="en_US">Cataloged from PDF version of thesis.</dim:field>
   <dim:field mdschema="dc" element="description" lang="en_US">Includes bibliographical references (pages 103-105).</dim:field>
   <dim:field mdschema="dc" element="description" qualifier="abstract" lang="en_US">An 8th-order continuous-time (CT) bandpass delta-sigma modulator has been designed and simulated in a 65 nm CMOS process. This modulator achieves in simulation 25 MHz signal bandwidth at 250 MHz center frequency with a signal-to- noise ratio (SNR) of 75.5 dB. The modulator samples at 1 GS/s while consuming 319 mW. On the system level, the feedback topology secures stability for the 8th-order system, achieving a maximum stable input range of -1.9 dBFS. A 2.5-V/1.2-V dual-supply loop filter with a feed-forward coupling path has been proposed to suppress noise and distortion. On the transistor level, a 5th -order dual-supply feed-forward operational amplifier (op amp) and a 4th-order single-supply feed-forward op amp have been designed to enable high modulator linearity and coefficient accuracy.</dim:field>
   <dim:field mdschema="dc" element="description" qualifier="statementofresponsibility" lang="en_US">by Xi Yang.</dim:field>
   <dim:field mdschema="dc" element="description" qualifier="degree" lang="en_US">S.M.</dim:field>
   <dim:field mdschema="dc" element="format" qualifier="extent" lang="en_US">105pages</dim:field>
   <dim:field mdschema="dc" element="language" qualifier="iso" lang="en_US">eng</dim:field>
   <dim:field mdschema="dc" element="publisher" lang="en_US">Massachusetts Institute of Technology</dim:field>
   <dim:field mdschema="dc" element="rights" lang="en_US">M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.</dim:field>
   <dim:field mdschema="dc" element="rights" qualifier="uri" lang="en_US">http://dspace.mit.edu/handle/1721.1/7582</dim:field>
   <dim:field mdschema="dc" element="subject" lang="en_US">Electrical Engineering and Computer Science.</dim:field>
   <dim:field mdschema="dc" element="title" lang="en_US">Design of a continuous-time bandpass delta-sigma modulator</dim:field>
   <dim:field mdschema="dc" element="title" qualifier="alternative" lang="en_US">Design of a CT bandpass delta-sigma modulator /</dim:field>
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   	&lt;Title>Design of a continuous-time bandpass delta-sigma modulator&lt;/Title>
   	&lt;Subtitle>Design of a CT bandpass delta-sigma modulator /&lt;/Subtitle>
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   	&lt;PublicationDate>2014&lt;/PublicationDate>
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        	&lt;DisplayName>Yang, Xi, Ph. D. Massachusetts Institute of Technology&lt;/DisplayName>
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            &lt;DisplayName>Massachusetts Institute of Technology&lt;/DisplayName>
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    &lt;Keyword>Electrical Engineering and Computer Science.&lt;/Keyword>
   	&lt;Abstract>An 8th-order continuous-time (CT) bandpass delta-sigma modulator has been designed and simulated in a 65 nm CMOS process. This modulator achieves in simulation 25 MHz signal bandwidth at 250 MHz center frequency with a signal-to- noise ratio (SNR) of 75.5 dB. The modulator samples at 1 GS/s while consuming 319 mW. On the system level, the feedback topology secures stability for the 8th-order system, achieving a maximum stable input range of -1.9 dBFS. A 2.5-V/1.2-V dual-supply loop filter with a feed-forward coupling path has been proposed to suppress noise and distortion. On the transistor level, a 5th -order dual-supply feed-forward operational amplifier (op amp) and a 4th-order single-supply feed-forward op amp have been designed to enable high modulator linearity and coefficient accuracy.&lt;/Abstract>
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