2026-09-23T23:09:05Zhttps://dspace.mit.edu/server/oai/requestoai:dspace.mit.edu:1721.1/88082022-01-13T07:54:29Zcom_1721.1_7582com_1721.1_7581col_1721.1_131023
Erich Ippen.
Gopinath, Juliet Tara, 1976-
Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
2005-08-23T15:30:09Z
2005-08-23T15:30:09Z
2000
2000
http://hdl.handle.net/1721.1/8808
48252169
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2000.
Includes bibliographical references (p. 83-86).
Carrier lifetime reduction resulting from proton bombardment of InGaAs/InP-based semiconductor saturable absorbers was studied experimentally, using a standard degenerate, cross-polarized pump-probe technique. Proton bombardment reduced carrier lifetimes by as much as a factor of 40 at low optical excitation densities. For high fluences, significant induced absorption was observed. The recovery of this excited state absorption did not show as significant a dependence on the level of proton bombardment. It is possible that the cause of this induced absorption - carriers outside the InGaAs quantum wells, highly excited carriers, or those trapped in satellite valleys - is not sensitive to the effects of bombardment. Also, the bombardment-created defects may saturate at such high fluences. The detrimental side-effects of proton bombardment - reduced modulation depth and increased non-saturable loss - have been shown to be mitigated with a short post-growth anneal. Finally, modelocking was demonstrated with the proton-bombarded samples in an erbium fiber laser.
Carrier lifetime reduction resulting from proton bombardment of InGaAs/InP-based semiconductor saturable absorbers was studied experimentally, using a standard degenerate, cross-polarized pump-probe technique. Proton bombardment reduced carrier lifetimes by as much as a factor of 40 at low optical excitation densities. For high fluences, significant induced absorption was observed. The recovery of this excited state absorption did not show as significant a dependence on the level of proton bombardment. It is possible that the cause of this induced absorption - carriers outside the InGaAs quantum wells, highly excited carriers, or those trapped in satellite valleys - is not sensitive to the effects of bombardment. Also, the bombardment-created defects may saturate at such high fluences. The detrimental side-effects of proton bombardment - reduced modulation depth and increased non-saturable loss - have been shown to be mitigated with a short post-growth anneal. Finally, modelocking was demonstrated with the proton-bombarded samples in an erbium fiber laser.
Carrier lifetime reduction resulting from proton bombardment of InGaAs/InP-based semiconductor saturable absorbers was studied experimentally, using a standard degenerate, cross-polarized pump-probe technique. Proton bombardment reduced carrier lifetimes by as much as a factor of 40 at low optical excitation densities. For high fluences, significant induced absorption was observed. The recovery of this excited state absorption did not show as significant a dependence on the level of proton bombardment. It is possible that the cause of this induced absorption - carriers outside the InGaAs quantum wells, highly excited carriers, or those trapped in satellite valleys - is not sensitive to the effects of bombardment. Also, the bombardment-created defects may saturate at such high fluences. The detrimental side-effects of proton bombardment - reduced modulation depth and increased non-saturable loss - have been shown to be mitigated with a short post-growth anneal. Finally, modelocking was demonstrated with the proton-bombarded samples in an erbium fiber laser.
Carrier lifetime reduction resulting from proton bombardment of InGaAs/InP-based semiconductor saturable absorbers was studied experimentally, using a standard degenerate, cross-polarized pump-probe technique. Proton bombardment reduced carrier lifetimes by as much as a factor of 40 at low optical excitation densities. For high fluences, significant induced absorption was observed. The recovery of this excited state absorption did not show as significant a dependence on the level of proton bombardment. It is possible that the cause of this induced absorption - carriers outside the InGaAs quantum wells, highly excited carriers, or those trapped in satellite valleys - is not sensitive to the effects of bombardment. Also, the bombardment-created defects may saturate at such high fluences. The detrimental side-effects of proton bombardment - reduced modulation depth and increased non-saturable loss - have been shown to be mitigated with a short post-growth anneal. Finally, modelocking was demonstrated with the proton-bombarded samples in an erbium fiber laser.
Carrier lifetime reduction resulting from proton bombardment of InGaAs/InP-based semiconductor saturable absorbers was studied experimentally, using a standard degenerate, cross-polarized pump-probe technique. Proton bombardment reduced carrier lifetimes by as much as a factor of 40 at low optical excitation densities. For high fluences, significant induced absorption was observed. The recovery of this excited state absorption did not show as significant a dependence on the level of proton bombardment. It is possible that the cause of this induced absorption - carriers outside the InGaAs quantum wells, highly excited carriers, or those trapped in satellite valleys - is not sensitive to the effects of bombardment. Also, the bombardment-created defects may saturate at such high fluences. The detrimental side-effects of proton bombardment - reduced modulation depth and increased non-saturable loss - have been shown to be mitigated with a short post-growth anneal. Finally, modelocking was demonstrated with the proton-bombarded samples in an erbium fiber laser.
Carrier lifetime reduction resulting from proton bombardment of InGaAs/InP-based semiconductor saturable absorbers was studied experimentally, using a standard degenerate, cross-polarized pump-probe technique. Proton bombardment reduced carrier lifetimes by as much as a factor of 40 at low optical excitation densities. For high fluences, significant induced absorption was observed. The recovery of this excited state absorption did not show as significant a dependence on the level of proton bombardment. It is possible that the cause of this induced absorption - carriers outside the InGaAs quantum wells, highly excited carriers, or those trapped in satellite valleys - is not sensitive to the effects of bombardment. Also, the bombardment-created defects may saturate at such high fluences. The detrimental side-effects of proton bombardment - reduced modulation depth and increased non-saturable loss - have been shown to be mitigated with a short post-growth anneal. Finally, modelocking was demonstrated with the proton-bombarded samples in an erbium fiber laser.
Carrier lifetime reduction resulting from proton bombardment of InGaAs/InP-based semiconductor saturable absorbers was studied experimentally, using a standard degenerate, cross-polarized pump-probe technique. Proton bombardment reduced carrier lifetimes by as much as a factor of 40 at low optical excitation densities. For high fluences, significant induced absorption was observed. The recovery of this excited state absorption did not show as significant a dependence on the level of proton bombardment. It is possible that the cause of this induced absorption - carriers outside the InGaAs quantum wells, highly excited carriers, or those trapped in satellite valleys - is not sensitive to the effects of bombardment. Also, the bombardment-created defects may saturate at such high fluences. The detrimental side-effects of proton bombardment - reduced modulation depth and increased non-saturable loss - have been shown to be mitigated with a short post-growth anneal. Finally, modelocking was demonstrated with the proton-bombarded samples in an erbium fiber laser.
by Juliet Tara Gopinath.
S.M.
86 p.
6445765 bytes
6445524 bytes
application/pdf
application/pdf
eng
Massachusetts Institute of Technology
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http://dspace.mit.edu/handle/1721.1/7582
Electrical Engineering and Computer Science.
The effect of proton bombardment on semiconductor saturable absorber structure
Thesis
application/pdf
false
Publication
unknown
unknown
<Publication xmlns="https://www.openaire.eu/cerif-profile/1.1/" id="cbbafc8b-3ac0-4e4f-8533-cccf7e3091b4">
<Type xmlns="https://www.openaire.eu/cerif-profile/vocab/COAR_Publication_Types">http://purl.org/coar/resource_type/c_1843</Type>
<Language>eng</Language>
<Title>The effect of proton bombardment on semiconductor saturable absorber structure</Title>
<PublishedIn>
<Publication>
</Publication>
</PublishedIn>
<PublicationDate>2000</PublicationDate>
<Authors>
<Author>
<DisplayName>Gopinath, Juliet Tara, 1976-</DisplayName>
<Affiliation>
<OrgUnit>
</OrgUnit>
</Affiliation>
</Author>
</Authors>
<Editors>
</Editors>
<Publishers>
<Publisher>
<DisplayName>Massachusetts Institute of Technology</DisplayName>
<OrgUnit />
</Publisher>
</Publishers>
<License>http://dspace.mit.edu/handle/1721.1/7582</License>
<Keyword>Electrical Engineering and Computer Science.</Keyword>
<Abstract>Carrier lifetime reduction resulting from proton bombardment of InGaAs/InP-based semiconductor saturable absorbers was studied experimentally, using a standard degenerate, cross-polarized pump-probe technique. Proton bombardment reduced carrier lifetimes by as much as a factor of 40 at low optical excitation densities. For high fluences, significant induced absorption was observed. The recovery of this excited state absorption did not show as significant a dependence on the level of proton bombardment. It is possible that the cause of this induced absorption - carriers outside the InGaAs quantum wells, highly excited carriers, or those trapped in satellite valleys - is not sensitive to the effects of bombardment. Also, the bombardment-created defects may saturate at such high fluences. The detrimental side-effects of proton bombardment - reduced modulation depth and increased non-saturable loss - have been shown to be mitigated with a short post-growth anneal. Finally, modelocking was demonstrated with the proton-bombarded samples in an erbium fiber laser.</Abstract>
<Abstract>Carrier lifetime reduction resulting from proton bombardment of InGaAs/InP-based semiconductor saturable absorbers was studied experimentally, using a standard degenerate, cross-polarized pump-probe technique. Proton bombardment reduced carrier lifetimes by as much as a factor of 40 at low optical excitation densities. For high fluences, significant induced absorption was observed. The recovery of this excited state absorption did not show as significant a dependence on the level of proton bombardment. It is possible that the cause of this induced absorption - carriers outside the InGaAs quantum wells, highly excited carriers, or those trapped in satellite valleys - is not sensitive to the effects of bombardment. Also, the bombardment-created defects may saturate at such high fluences. The detrimental side-effects of proton bombardment - reduced modulation depth and increased non-saturable loss - have been shown to be mitigated with a short post-growth anneal. Finally, modelocking was demonstrated with the proton-bombarded samples in an erbium fiber laser.</Abstract>
<Abstract>Carrier lifetime reduction resulting from proton bombardment of InGaAs/InP-based semiconductor saturable absorbers was studied experimentally, using a standard degenerate, cross-polarized pump-probe technique. Proton bombardment reduced carrier lifetimes by as much as a factor of 40 at low optical excitation densities. For high fluences, significant induced absorption was observed. The recovery of this excited state absorption did not show as significant a dependence on the level of proton bombardment. It is possible that the cause of this induced absorption - carriers outside the InGaAs quantum wells, highly excited carriers, or those trapped in satellite valleys - is not sensitive to the effects of bombardment. Also, the bombardment-created defects may saturate at such high fluences. The detrimental side-effects of proton bombardment - reduced modulation depth and increased non-saturable loss - have been shown to be mitigated with a short post-growth anneal. Finally, modelocking was demonstrated with the proton-bombarded samples in an erbium fiber laser.</Abstract>
<Abstract>Carrier lifetime reduction resulting from proton bombardment of InGaAs/InP-based semiconductor saturable absorbers was studied experimentally, using a standard degenerate, cross-polarized pump-probe technique. Proton bombardment reduced carrier lifetimes by as much as a factor of 40 at low optical excitation densities. For high fluences, significant induced absorption was observed. The recovery of this excited state absorption did not show as significant a dependence on the level of proton bombardment. It is possible that the cause of this induced absorption - carriers outside the InGaAs quantum wells, highly excited carriers, or those trapped in satellite valleys - is not sensitive to the effects of bombardment. Also, the bombardment-created defects may saturate at such high fluences. The detrimental side-effects of proton bombardment - reduced modulation depth and increased non-saturable loss - have been shown to be mitigated with a short post-growth anneal. Finally, modelocking was demonstrated with the proton-bombarded samples in an erbium fiber laser.</Abstract>
<Abstract>Carrier lifetime reduction resulting from proton bombardment of InGaAs/InP-based semiconductor saturable absorbers was studied experimentally, using a standard degenerate, cross-polarized pump-probe technique. Proton bombardment reduced carrier lifetimes by as much as a factor of 40 at low optical excitation densities. For high fluences, significant induced absorption was observed. The recovery of this excited state absorption did not show as significant a dependence on the level of proton bombardment. It is possible that the cause of this induced absorption - carriers outside the InGaAs quantum wells, highly excited carriers, or those trapped in satellite valleys - is not sensitive to the effects of bombardment. Also, the bombardment-created defects may saturate at such high fluences. The detrimental side-effects of proton bombardment - reduced modulation depth and increased non-saturable loss - have been shown to be mitigated with a short post-growth anneal. Finally, modelocking was demonstrated with the proton-bombarded samples in an erbium fiber laser.</Abstract>
<Abstract>Carrier lifetime reduction resulting from proton bombardment of InGaAs/InP-based semiconductor saturable absorbers was studied experimentally, using a standard degenerate, cross-polarized pump-probe technique. Proton bombardment reduced carrier lifetimes by as much as a factor of 40 at low optical excitation densities. For high fluences, significant induced absorption was observed. The recovery of this excited state absorption did not show as significant a dependence on the level of proton bombardment. It is possible that the cause of this induced absorption - carriers outside the InGaAs quantum wells, highly excited carriers, or those trapped in satellite valleys - is not sensitive to the effects of bombardment. Also, the bombardment-created defects may saturate at such high fluences. The detrimental side-effects of proton bombardment - reduced modulation depth and increased non-saturable loss - have been shown to be mitigated with a short post-growth anneal. Finally, modelocking was demonstrated with the proton-bombarded samples in an erbium fiber laser.</Abstract>
<Abstract>Carrier lifetime reduction resulting from proton bombardment of InGaAs/InP-based semiconductor saturable absorbers was studied experimentally, using a standard degenerate, cross-polarized pump-probe technique. Proton bombardment reduced carrier lifetimes by as much as a factor of 40 at low optical excitation densities. For high fluences, significant induced absorption was observed. The recovery of this excited state absorption did not show as significant a dependence on the level of proton bombardment. It is possible that the cause of this induced absorption - carriers outside the InGaAs quantum wells, highly excited carriers, or those trapped in satellite valleys - is not sensitive to the effects of bombardment. Also, the bombardment-created defects may saturate at such high fluences. The detrimental side-effects of proton bombardment - reduced modulation depth and increased non-saturable loss - have been shown to be mitigated with a short post-growth anneal. Finally, modelocking was demonstrated with the proton-bombarded samples in an erbium fiber laser.</Abstract>
<Access xmlns="http://purl.org/coar/access_right"
>
</Access>
</Publication>