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Henry I. Smith. Walsh, Michael E. (Michael Edward), 1975- Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science. Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science 2005-08-23T15:32:04Z 2005-08-23T15:32:04Z 2000 2000 http://hdl.handle.net/1721.1/8812 48253228 Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2000. Includes bibliographical references. Proliferation of data caused by rapid increases in computer power and the rise of the internet have caused an acute need for advanced data storage technology. Patterned magnetic media and magneto-resistive random-access memory (MRAM) can potentially fulfill this need. The technique of interference lithography is examined in the context of patterning ~100 nm size features. An interferometer is designed and built which will allow exposure of gratings and grids with a minimum spatial period of ~ 170 nm. Etching methods, especially ion-beam etching, or ion milling, is investigated as the optimal choice for patterning sub-100 nm features in thin magnetic films and multi-layer thin film stacks. The advantages and disadvantages of a variety of resist stacks and etch masks are presented. An optimal process for linewidth control and preservation of magnetic properties is found to include a thin phase-shifting resist stack and a tungsten hardmask. by Michael E. Walsh. S.M. 85 leaves 8799753 bytes 8799513 bytes application/pdf application/pdf eng Massachusetts Institute of Technology M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. http://dspace.mit.edu/handle/1721.1/7582 Electrical Engineering and Computer Science. Nanostructuring magnetic thin films using interference lithography Thesis application/pdf false Publication unknown unknown <Publication xmlns="https://www.openaire.eu/cerif-profile/1.1/" id="41d2ae89-96e4-499c-9a70-d609c2cad2e7"> <Type xmlns="https://www.openaire.eu/cerif-profile/vocab/COAR_Publication_Types">http://purl.org/coar/resource_type/c_1843</Type> <Language>eng</Language> <Title>Nanostructuring magnetic thin films using interference lithography</Title> <PublishedIn> <Publication> </Publication> </PublishedIn> <PublicationDate>2000</PublicationDate> <Authors> <Author> <DisplayName>Walsh, Michael E. (Michael Edward), 1975-</DisplayName> <Affiliation> <OrgUnit> </OrgUnit> </Affiliation> </Author> </Authors> <Editors> </Editors> <Publishers> <Publisher> <DisplayName>Massachusetts Institute of Technology</DisplayName> <OrgUnit /> </Publisher> </Publishers> <License>http://dspace.mit.edu/handle/1721.1/7582</License> <Keyword>Electrical Engineering and Computer Science.</Keyword> <Abstract>Proliferation of data caused by rapid increases in computer power and the rise of the internet have caused an acute need for advanced data storage technology. Patterned magnetic media and magneto-resistive random-access memory (MRAM) can potentially fulfill this need. The technique of interference lithography is examined in the context of patterning ~100 nm size features. An interferometer is designed and built which will allow exposure of gratings and grids with a minimum spatial period of ~ 170 nm. Etching methods, especially ion-beam etching, or ion milling, is investigated as the optimal choice for patterning sub-100 nm features in thin magnetic films and multi-layer thin film stacks. The advantages and disadvantages of a variety of resist stacks and etch masks are presented. An optimal process for linewidth control and preservation of magnetic properties is found to include a thin phase-shifting resist stack and a tungsten hardmask.</Abstract> <Access xmlns="http://purl.org/coar/access_right" > </Access> </Publication>