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Anthony Marques and James E. Chung. Chadwick, Thomas B. (Thomas Burhoe) Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science. Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science 2005-08-24T19:40:29Z 2005-08-24T19:40:29Z 1994 1994 http://hdl.handle.net/1721.1/9096 46988324 Thesis (S.B. and S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1994. Includes bibliographical references (p. 99). For the past three years, a project group at the Charles Stark Draper Laboratory has been developing a nonvolatile memory that uses novel ferroelectric technology. The advancements made could prove to give ferroelectrics a new lease on life as a memory technology by overcoming some of the inherent limitations that have hampered their use in the past. The primary advancement of the project has been the development of a nondestructive readout (NDRO) technique which exploits the hysteresis exhibited by the small-signal capacitance of ferroelectrics. This has led to the development of an NDRO sense amplifier which has evolved from circuit board prototypes to a fully custom CMOS part. A multichip module (MCM) was employed to integrate the CMOS technology with a ferroelectric technology. This thesis develops several models for the behavior of ferroelectrics, examines how ferroelectric memory compares to the more mainstream silicon-based memory technologies, and chronicles the project from the inception of the NDRO sensing technique through the production of the various experimental parts. by Thomas B. Chadwick, Jr. S.B. S.M. 99 p. 6319540 bytes 6319296 bytes application/pdf application/pdf eng Massachusetts Institute of Technology M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. http://dspace.mit.edu/handle/1721.1/7582 Electrical Engineering and Computer Science. The development of a nonvolatile ferroelectric memory with nondestructive readout Nonvolatile ferroelectric memory with nondestructive readout Thesis application/pdf Publication unknown unknown <Publication xmlns="https://www.openaire.eu/cerif-profile/1.1/" id="ac2265f2-5a8f-4f6c-8814-36cf8e843e37"> <Type xmlns="https://www.openaire.eu/cerif-profile/vocab/COAR_Publication_Types">http://purl.org/coar/resource_type/c_1843</Type> <Language>eng</Language> <Title>The development of a nonvolatile ferroelectric memory with nondestructive readout</Title> <Subtitle>Nonvolatile ferroelectric memory with nondestructive readout</Subtitle> <PublishedIn> <Publication> </Publication> </PublishedIn> <PublicationDate>1994</PublicationDate> <Authors> <Author> <DisplayName>Chadwick, Thomas B. (Thomas Burhoe)</DisplayName> <Affiliation> <OrgUnit> </OrgUnit> </Affiliation> </Author> </Authors> <Editors> </Editors> <Publishers> <Publisher> <DisplayName>Massachusetts Institute of Technology</DisplayName> <OrgUnit /> </Publisher> </Publishers> <License>http://dspace.mit.edu/handle/1721.1/7582</License> <Keyword>Electrical Engineering and Computer Science.</Keyword> <Abstract>For the past three years, a project group at the Charles Stark Draper Laboratory has been developing a nonvolatile memory that uses novel ferroelectric technology. The advancements made could prove to give ferroelectrics a new lease on life as a memory technology by overcoming some of the inherent limitations that have hampered their use in the past. The primary advancement of the project has been the development of a nondestructive readout (NDRO) technique which exploits the hysteresis exhibited by the small-signal capacitance of ferroelectrics. This has led to the development of an NDRO sense amplifier which has evolved from circuit board prototypes to a fully custom CMOS part. A multichip module (MCM) was employed to integrate the CMOS technology with a ferroelectric technology. This thesis develops several models for the behavior of ferroelectrics, examines how ferroelectric memory compares to the more mainstream silicon-based memory technologies, and chronicles the project from the inception of the NDRO sensing technique through the production of the various experimental parts.</Abstract> <Access xmlns="http://purl.org/coar/access_right" > </Access> </Publication>