2026-09-19T15:57:02Zhttps://dspace.mit.edu/server/oai/requestoai:dspace.mit.edu:1721.1/930642021-07-05T14:03:20Zcom_1721.1_7582com_1721.1_7581col_1721.1_131023
Tomás Palacios and Mildred S. Dresselhaus.
Zubair, Ahmad, Ph.D. Massachusetts Institute of Technology
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science.
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
2015-01-20T17:59:19Z
2015-01-20T17:59:19Z
2014
2014
http://hdl.handle.net/1721.1/93064
899998881
Thesis: S.M., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2014.
Bibliographical references 35-37 missing from the bibliography. Cataloged from PDF version of thesis.
Includes bibliographical references (pages 61-[64]).
The excellent transport properties of graphene make it an excellent option for very high frequency electronics. However, the poor output resistance and difficult lithography of lateral transistors significantly limit its performance. In this thesis, we propose a new kind of vertical graphene base transistor to take advantage of both wide bandgap GaN semiconductors and zero bandgap graphene for high frequency transistors. This majority-carrier device has a metal collector, a graphene base and an AlGaN/GaN emitter. The first device prototype exhibits very promising current density(~mA/cm 2 ) and current gain ([alpha] ~ 50 %). Simulations further support that with proper optimization of the materials and device structure, the proposed transistor can be a promising candidate for future high frequency applications.
by Ahmad Zubair.
S.M.
63, [9] pages
eng
Massachusetts Institute of Technology
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http://dspace.mit.edu/handle/1721.1/7582
Electrical Engineering and Computer Science.
Fabrication of graphene-on-GaN vertical transistors
Thesis
application/pdf
false
Publication
unknown
unknown
<Publication xmlns="https://www.openaire.eu/cerif-profile/1.1/" id="be439a0e-1803-4a15-aa4e-b9cd7be9180f">
<Type xmlns="https://www.openaire.eu/cerif-profile/vocab/COAR_Publication_Types">http://purl.org/coar/resource_type/c_1843</Type>
<Language>eng</Language>
<Title>Fabrication of graphene-on-GaN vertical transistors</Title>
<PublishedIn>
<Publication>
</Publication>
</PublishedIn>
<PublicationDate>2014</PublicationDate>
<Authors>
<Author>
<DisplayName>Zubair, Ahmad, Ph.D. Massachusetts Institute of Technology</DisplayName>
<Affiliation>
<OrgUnit>
</OrgUnit>
</Affiliation>
</Author>
</Authors>
<Editors>
</Editors>
<Publishers>
<Publisher>
<DisplayName>Massachusetts Institute of Technology</DisplayName>
<OrgUnit />
</Publisher>
</Publishers>
<License>http://dspace.mit.edu/handle/1721.1/7582</License>
<Keyword>Electrical Engineering and Computer Science.</Keyword>
<Abstract>The excellent transport properties of graphene make it an excellent option for very high frequency electronics. However, the poor output resistance and difficult lithography of lateral transistors significantly limit its performance. In this thesis, we propose a new kind of vertical graphene base transistor to take advantage of both wide bandgap GaN semiconductors and zero bandgap graphene for high frequency transistors. This majority-carrier device has a metal collector, a graphene base and an AlGaN/GaN emitter. The first device prototype exhibits very promising current density(~mA/cm 2 ) and current gain ([alpha] ~ 50 %). Simulations further support that with proper optimization of the materials and device structure, the proposed transistor can be a promising candidate for future high frequency applications.</Abstract>
<Access xmlns="http://purl.org/coar/access_right"
>
</Access>
</Publication>