2026-09-19T17:03:03Zhttps://dspace.mit.edu/server/oai/requestoai:dspace.mit.edu:1721.1/938382022-01-13T07:54:01Zcom_1721.1_7582com_1721.1_7581col_1721.1_131023
Marc A. Baldo.
Siddiqui, Saima Afroz
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science.
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
2015-02-05T18:27:37Z
2015-02-05T18:27:37Z
2014
2014
http://hdl.handle.net/1721.1/93838
900736926
Thesis: S.M., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2014.
Cataloged from PDF version of thesis.
Includes bibliographical references (pages 61-65).
Nonvolatile memory and logic devices rely on the manipulation of domain walls in magnetic nanowires, and scaling of these devices requires an understanding of domain wall behavior as a function of the wire width. Due to the increased importance of edge roughness and microstructure in narrow lines, domain wall pinning increases dramatically as the wire dimensions decrease and stochastic behavior is expected depending on the distribution of pinning sites. This work reports on the field driven domain wall statistics in sub-100 nm wide nanowires made from Co films of 8 nm thickness made by an electron beam lithography and etching process that minimizes edge roughness.
by Saima Afroz Siddiqui.
S.M.
65 pages
eng
Massachusetts Institute of Technology
M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.
http://dspace.mit.edu/handle/1721.1/7582
Electrical Engineering and Computer Science.
Magnetostatic interaction in nanowires
Thesis
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<Abstract>Nonvolatile memory and logic devices rely on the manipulation of domain walls in magnetic nanowires, and scaling of these devices requires an understanding of domain wall behavior as a function of the wire width. Due to the increased importance of edge roughness and microstructure in narrow lines, domain wall pinning increases dramatically as the wire dimensions decrease and stochastic behavior is expected depending on the distribution of pinning sites. This work reports on the field driven domain wall statistics in sub-100 nm wide nanowires made from Co films of 8 nm thickness made by an electron beam lithography and etching process that minimizes edge roughness.</Abstract>
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