<?xml version="1.0" encoding="UTF-8"?><?xml-stylesheet type="text/xsl" href="static/style.xsl"?><OAI-PMH xmlns="http://www.openarchives.org/OAI/2.0/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/ http://www.openarchives.org/OAI/2.0/OAI-PMH.xsd"><responseDate>2026-09-20T22:16:52Z</responseDate><request verb="GetRecord" identifier="oai:dspace.mit.edu:1721.1/9626" metadataPrefix="dim">https://dspace.mit.edu/server/oai/request</request><GetRecord><record><header><identifier>oai:dspace.mit.edu:1721.1/9626</identifier><datestamp>2021-07-05T14:03:20Z</datestamp><setSpec>com_1721.1_7582</setSpec><setSpec>com_1721.1_7581</setSpec><setSpec>col_1721.1_131023</setSpec></header><metadata><dim:dim xmlns:dim="http://www.dspace.org/xmlns/dspace/dim" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns:doc="http://www.lyncode.com/xoai" xsi:schemaLocation="http://www.dspace.org/xmlns/dspace/dim http://www.dspace.org/schema/dim.xsd">
   <dim:field mdschema="dc" element="contributor" qualifier="advisor" lang="en_US">Henry I. Smith.</dim:field>
   <dim:field mdschema="dc" element="contributor" qualifier="author" lang="en_US">Djomehri, Ihsan Jahed, 1976-</dim:field>
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   <dim:field mdschema="dc" element="date" qualifier="accessioned">2005-08-19T19:02:03Z</dim:field>
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   <dim:field mdschema="dc" element="date" qualifier="copyright" lang="en_US">1998</dim:field>
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   <dim:field mdschema="dc" element="description" lang="en_US">Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1998.</dim:field>
   <dim:field mdschema="dc" element="description" lang="en_US">Includes bibliographical references (p. 47).</dim:field>
   <dim:field mdschema="dc" element="description" qualifier="abstract" lang="en_US">Initial design and development of a new paradigm in nanolithography, zone plate array lithography (ZPAL), has yielded a clearer understanding of its operation, construction, and performance. The benefits of ZPAL as a maskless strategy to write arbitrary patterns with ~ 25 nm resolution are explored. To optimize the properties of the system required proper design of zone plate focusing. Due to ZPAL's universality, the study has been conducted in the deep UV; a process to create zone plates with 250 nm theoretical spots sizes for this regime was developed. Familiarity with nanofabrication technology proved essential, especially e-beam lithography. Next, an optical setup was built replete with alignment interferometry, precision stage motion, and radiation from a 193 nm ArF laser. A rubric for the implementation of the multiplexing coupled  with coordination architecture demonstrated a potentially high throughput of l cm2 / s. Moreover, the results of exposure tests show digital pattern generation from an array of beamlets. Because the ideal ZPAL system would function with x-rays, a discussion on its design and practical development has been included. Despite anticipated hurdles, spearheading this venture promises to drive lithography to its limit.</dim:field>
   <dim:field mdschema="dc" element="description" qualifier="statementofresponsibility" lang="en_US">by Ihsan Jahed Djomehri.</dim:field>
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   <dim:field mdschema="dc" element="format" qualifier="extent" lang="en_US">47 p.</dim:field>
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   <dim:field mdschema="dc" element="title" lang="en_US">Zone plate array lithography in the deep UV</dim:field>
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   	&lt;Title>Zone plate array lithography in the deep UV&lt;/Title>
   	&lt;Subtitle>ZPAL&lt;/Subtitle>
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   	&lt;Abstract>Initial design and development of a new paradigm in nanolithography, zone plate array lithography (ZPAL), has yielded a clearer understanding of its operation, construction, and performance. The benefits of ZPAL as a maskless strategy to write arbitrary patterns with ~ 25 nm resolution are explored. To optimize the properties of the system required proper design of zone plate focusing. Due to ZPAL&amp;apos;s universality, the study has been conducted in the deep UV; a process to create zone plates with 250 nm theoretical spots sizes for this regime was developed. Familiarity with nanofabrication technology proved essential, especially e-beam lithography. Next, an optical setup was built replete with alignment interferometry, precision stage motion, and radiation from a 193 nm ArF laser. A rubric for the implementation of the multiplexing coupled  with coordination architecture demonstrated a potentially high throughput of l cm2 / s. Moreover, the results of exposure tests show digital pattern generation from an array of beamlets. Because the ideal ZPAL system would function with x-rays, a discussion on its design and practical development has been included. Despite anticipated hurdles, spearheading this venture promises to drive lithography to its limit.&lt;/Abstract>
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