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    • Enhanced Hole Transport in Short-Channel Strained-SiGe p-MOSFETs 

      Gomez, Leonardo; Hashemi, Pouya; Hoyt, Judy L. (Institute of Electrical and Electronics Engineers, 2009-10)
      Hole mobility and velocity are extracted from scaled strained-Si[subscript 0.4]5Ge[subscript 0.55]channel p-MOSFETs on insulator. Devices have been fabricated with sub-100-nm gate lengths, demonstrating hole mobility and ...