Synthesis of bilayer graphene and hexagonal boron nitride by chemical vapor deposition method
Author(s)
Fang, Wenjing, Ph. D. Massachusetts Institute of Technology
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Other Contributors
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science.
Advisor
Jing Kong.
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The aim of this thesis is two-fold: the first is to develop a reliable method for synthesizing bilayer graphene using chemical vapor deposition (CVD) method and to understand the growth mechanism. The second part involves exploring methods of synthesizing hexagonal boron nitride (hBN). The successful isolation of monolayer graphene in 2004 has attracted many researchers to search for potential applications of graphene and other two-dimensional materials in electronic and optical devices. However, the Scotch-tape method sets contraints for such applications due to the limited size and randomized location of obtained flakes. Thus, synthesizing large-area, high-quality two dimensional materials is highly desirable. This thesis seeks to develop a method to produce both bilayers and hBN with large area by CVD method and to investigate the underlying growth mechanisms for better control over the thickness, uniformity and stacking orientation.
Description
Thesis: Ph. D., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2016. Cataloged from PDF version of thesis. Includes bibliographical references (pages 156-165).
Date issued
2016Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer SciencePublisher
Massachusetts Institute of Technology
Keywords
Electrical Engineering and Computer Science.