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dc.contributor.advisorDana Weinstein and Luca Daniel.en_US
dc.contributor.authorBahr, Bichoy Waguih Azmyen_US
dc.contributor.otherMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Science.en_US
dc.date.accessioned2016-12-05T19:10:59Z
dc.date.available2016-12-05T19:10:59Z
dc.date.copyright2016en_US
dc.date.issued2016en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/105569
dc.descriptionThesis: Ph. D., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2016.en_US
dc.descriptionThis electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.en_US
dc.descriptionCataloged from student-submitted PDF version of thesis.en_US
dc.descriptionIncludes bibliographical references (pages 239-255).en_US
dc.description.abstractFrequency sources and high quality filters based on mechanical resonators are essential building blocks for communication systems as well as analog and digital electronics. Driven by the continuous demand for reduction in power, size and overall cost, monolithic integration of mechanical resonators in standard integrated circuit (IC) technology has been the focus of multiple research efforts. Micro-Electro-Mechanical (MEM) resonators offer an ultimate solution, with 100x higher quality factors and 10⁴x smaller footprint, when compared to on-chip LC tank circuits. A new class of truly solid-state, monolithically integrated, GHz-frequencies CMOS-MEMS resonators is presented. No post-processing or special packaging of any kind is required beyond the standard CMOS process. Resonant body transistor (RBT) is constructed by using active field-effect-transistor (FET) sensing. A phononic crystal (PnC) implemented in the CMOS back-end-of-line (BEOL) layers along with the bulk wafer are used to create a phononic waveguide. The latter confines acoustic vibrations in the CMOS front-end-of-line (FEOL) layers. Operator-theoretic analysis for these waveguides is presented in explicit analogy to quantum mechanics and photonic waveguides; with a study of perturbation theory, coupled-mode theory and adiabatic theorem. Superior energy confinement is achieved, allowing record high Q ~ 14, 800 and fo - Q ~ 4.85 x 10¹³ for CMOS-RBTs at 3 GHz. Simulation, modeling, optimization, proto- typing and testing of these resonators is presented. RBTs in FinFET technologies are also exploerd, for resonance frequencies up to 33 GHz. The thesis also explores the integration of Lamb-mode resonators in standard GaN monolithic-microwave-IC (MMIC) process. The first monolithic 1GHz MEMS-based oscillator in standard GaN MMIC technology is demonstrated, together with monolithic lattice and ladder filters. This allows for complete RF front-ends in GaN MMIC technology.en_US
dc.description.statementofresponsibilityby Bichoy Waguih Azmy Bahr.en_US
dc.format.extent255 pagesen_US
dc.language.isoengen_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsM.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582en_US
dc.subjectElectrical Engineering and Computer Science.en_US
dc.titleMonolithically integrated MEMS resonators and oscillators in standard IC technologyen_US
dc.title.alternativeMonolithically integrated microelectromechanical systems resonators and oscillators in standard IC technologyen_US
dc.typeThesisen_US
dc.description.degreePh. D.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
dc.identifier.oclc963849936en_US


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