The effect of strain and orientation on Inx̳Ga₁₋x̳As layers grown by molecular beam epitaxy
Author(s)
Elcess, Kimberley
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Other Contributors
Massachusetts Institute of Technology. Department of Materials Science and Engineering.
Advisor
Clifton G. Fonstad.
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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1988. On t.p. all "x̳" is subscript. Includes bibliographical references.
Date issued
1988Department
Massachusetts Institute of Technology. Department of Materials Science and EngineeringPublisher
Massachusetts Institute of Technology
Keywords
Materials Science and Engineering.