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dc.contributor.advisorLeonid S. Levitov.en_US
dc.contributor.authorKhoo, Jun Yongen_US
dc.contributor.otherMassachusetts Institute of Technology. Department of Physics.en_US
dc.date.accessioned2019-01-11T16:03:14Z
dc.date.available2019-01-11T16:03:14Z
dc.date.copyright2018en_US
dc.date.issued2018en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/119929
dc.descriptionThesis: Ph. D., Massachusetts Institute of Technology, Department of Physics, 2018.en_US
dc.descriptionCataloged from PDF version of thesis.en_US
dc.descriptionIncludes bibliographical references (pages 131-146).en_US
dc.description.abstractThe excellent electron properties of graphene, an atomically-thin material with record-high carrier mobility and gate tunability, make it central to modern nanoscience. However, the spin-orbit interaction (SOI) naturally present in graphene is extremely weak and has yet to be observed experimentally. This presents an obstacle for accessing novel phenomena in transport and optics, in particular those related to topological properties. This thesis seeks to address this limitation by artificially introducing SOI in graphene sandwiched between other atomically-thin materials that can produce an interfacial SOI in graphene. In particular, it is demonstrated that a strong SOI, naturally present in the two-dimensional materials such as transition metal dichalcogenides (TMD), can be partially transferred to graphene via the proximity effect. We predict a range of novel phenomena arising in graphene bilayers with layer-asymmetric SOI induced by a proximal TMD layer. These include a gate-tunable SOI, a gate-tunable intrinsic valley-Hall conductivity, as well as a gate-tunable edge conductivity, to name just a few. These findings will facilitate exploring previously inaccessible spin-related phenomena in graphene and other van der Waals heterostructures.en_US
dc.description.statementofresponsibilityby Jun Yong Khoo.en_US
dc.format.extent146 pagesen_US
dc.language.isoengen_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsMIT theses are protected by copyright. They may be viewed, downloaded, or printed from this source but further reproduction or distribution in any format is prohibited without written permission.en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582en_US
dc.subjectPhysics.en_US
dc.titleIntroducing spin-orbit interaction in grapheneen_US
dc.title.alternativeIntroducing SOI in grapheneen_US
dc.typeThesisen_US
dc.description.degreePh. D.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Physics
dc.identifier.oclc1079895546en_US


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