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    • Impact of uniaxial strain on P-channel 111-V quantum-well field effect transistors 

      Xia, Ling, Ph. D. Massachusetts Institute of Technology (Massachusetts Institute of Technology, 2012)
      Continuous scaling of Si complementary metal-oxide-semiconductor (CMOS) technology requires a boost in carrier injection velocity. With the benefits of strained Si having been exhausted, n-channel I-V quantum-well field ...