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1/f noise in MOSFETs with ultrathin gate dielectrics

dc.contributor.authorGross, Blaine Jeffrey.en_US
dc.date.accessioned2005-08-15T16:49:31Z
dc.date.available2005-08-15T16:49:31Z
dc.date.copyright1992en_US
dc.date.issued1992en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/13192en_US
dc.descriptionThesis: Ph. D., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 1992en_US
dc.descriptionIncludes bibliographical references (p. 176-184).en_US
dc.description.statementofresponsibilityby Blaine Jeffrey Gross.en_US
dc.format.extent230 p.en_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsMIT theses may be protected by copyright. Please reuse MIT thesis content according to the MIT Libraries Permissions Policy, which is available through the URL provided.en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582en_US
dc.subjectElectrical Engineering and Computer Scienceen_US
dc.title1/f noise in MOSFETs with ultrathin gate dielectricsen_US
dc.typeThesisen_US
dc.description.degreePh. D.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Scienceen_US
dc.identifier.oclc26680871en_US
dc.description.collectionPh. D. Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Scienceen_US
dspace.imported2023-09-11T21:15:50Zen_US


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