| dc.contributor.advisor | Hae-Seung Lee. | en_US |
| dc.contributor.author | Tewksbury, Theodore L. (Theodore Locke) | en_US |
| dc.date.accessioned | 2008-04-24T08:49:20Z | |
| dc.date.available | 2008-04-24T08:49:20Z | |
| dc.date.copyright | 1992 | en_US |
| dc.date.issued | 1992 | en_US |
| dc.identifier.uri | http://dspace.mit.edu/handle/1721.1/13238 | en_US |
| dc.identifier.uri | http://hdl.handle.net/1721.1/13238 | |
| dc.description | Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1992. | en_US |
| dc.description | Includes bibliographical references (p. 299-317). | en_US |
| dc.description.statementofresponsibility | by Theodore L. Tewksbury III. | en_US |
| dc.format.extent | xvii, 317 p. | en_US |
| dc.language.iso | eng | en_US |
| dc.publisher | Massachusetts Institute of Technology | en_US |
| dc.rights | M.I.T. theses are protected by
copyright. They may be viewed from this source for any purpose, but
reproduction or distribution in any format is prohibited without written
permission. See provided URL for inquiries about permission. | en_US |
| dc.rights.uri | http://dspace.mit.edu/handle/1721.1/13238 | en_US |
| dc.rights.uri | http://dspace.mit.edu/handle/1721.1/7582 | en_US |
| dc.subject | Electrical Engineering and Computer Science | en_US |
| dc.title | Relaxation effects in MOS devices due to tunnel exchange with near-interface oxide traps | en_US |
| dc.type | Thesis | en_US |
| dc.description.degree | Ph.D. | en_US |
| dc.contributor.department | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science | |
| dc.identifier.oclc | 26912439 | en_US |
