| dc.contributor.advisor | . | en_US |
| dc.contributor.author | Hennessy, John, 1980- | en_US |
| dc.contributor.other | Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science. | en_US |
| dc.date.accessioned | 2005-09-27T16:59:31Z | |
| dc.date.available | 2005-09-27T16:59:31Z | |
| dc.date.copyright | 2004 | en_US |
| dc.date.issued | 2004 | en_US |
| dc.identifier.uri | http://hdl.handle.net/1721.1/28556 | |
| dc.description | Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2004. | en_US |
| dc.description | Includes bibliographical references (p. 53-55). | en_US |
| dc.description.abstract | As CMOS devices continue to scale to smaller dimensions, it has become clear that new materials and structures are needed to also continue to improve performance. Germanium on insulator is proposed as it combines both a high mobility material (relative to silicon) and a structure with improved scaling characteristics compared to bulk devices. The goal of this work is to develop of procedure for the transfer of a germanium layer to bulk silicon by means of wafer bonding and hydrogen-induced layer transfer. | en_US |
| dc.description.statementofresponsibility | by John Hennessy. | en_US |
| dc.format.extent | 55 p. | en_US |
| dc.format.extent | 2462794 bytes | |
| dc.format.extent | 2467410 bytes | |
| dc.format.mimetype | application/pdf | |
| dc.format.mimetype | application/pdf | |
| dc.language.iso | en_US | |
| dc.publisher | Massachusetts Institute of Technology | en_US |
| dc.rights | M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. | en_US |
| dc.rights.uri | http://dspace.mit.edu/handle/1721.1/7582 | |
| dc.subject | Electrical Engineering and Computer Science. | en_US |
| dc.title | Germanium on insulator fabrication technology | en_US |
| dc.type | Thesis | en_US |
| dc.description.degree | S.M. | en_US |
| dc.contributor.department | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science | |
| dc.identifier.oclc | 57418313 | en_US |
