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dc.contributor.advisorVladimir Bulović, Timothy M. Swager and Michael F. Rubner .en_US
dc.contributor.authorMascaro, Debra Jane Lightly, 1972-en_US
dc.contributor.otherMassachusetts Institute of Technology. Dept. of Materials Science and Engineering.en_US
dc.date.accessioned2006-03-29T18:29:05Z
dc.date.available2006-03-29T18:29:05Z
dc.date.copyright2004en_US
dc.date.issued2004en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/32266
dc.descriptionThesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2004.en_US
dc.descriptionIncludes bibliographical references (p. 195-204).en_US
dc.description.abstractMolecular organic semiconductors have recently been applied widely as active layers in electronic and optoelectronic devices such as organic field-effect transistors and light-emitting devices. The use of organic active layers derives both from materials considerations and from processing advantages. The goal is to enable novel applications and structures that are difficult to produce with conventional materials (e.g., large-area, flexible, or transparent devices). Because charge transport efficiency increases with improved molecular ordering, the formation of large-area single crystals of these materials is essential for achieving integrated active organic structures. This thesis presents (1) an investigation of substrate surface modification as a means of inducing order within polycrystalline organic thin films, and (2) a new method for oriented, in-plane growth of millimeter-scale single crystal needles of molecular organic semiconductors. Two types of modified surfaces are investigated: (a) self-assembled nanofilms (SANFs), and (b) submicron periodic surface-relief structures. Polycrystalline thin films of pentacene and tetracene are vacuum sublimed onto pre-modified substrates. This work initially evaluates the influence of organosilane SANFs on morphology and field-effect transistor performance. It then attempts to use lithographically-defined surface relief to orient pentacene and tetracene grains via graphoepitaxy during thin film deposition. The periodic surface relief selects several preferred grain orientations, but uniaxial in-plane orientation is prevented by insufficient interfacial tension anisotropy.en_US
dc.description.abstract(cont.) As a second approach to achieving large-area single crystals, solvent-vapor annealing is introduced. Permeation of solvent vapor into an amorphous organic film facilitates dewetting, aggregation, and crystallization via plasticization and interfacial tension effects. When applied to thin films of tris(8-hydroxyquinoline) aluminum (Alq3) on patterned substrates, solvent-vapor annealing yields oriented, millimeter-scale single crystal needles. The use of an appropriate SANF aids the dewetting and aggregation processes. Moreover, periodic surface relief produces anisotropic mass transport of solvated Alq3 via capillary flow, yielding orientation of the crystal needles in a specified in-plane direction. The crystal formation mechanism is expected to be generally applicable to a broad range of soluble organic materials, enabling their use in integrated active structures.en_US
dc.description.statementofresponsibilityby Debra Jane Lightly Mascaro.en_US
dc.format.extent204en_US
dc.format.extent11727974 bytes
dc.format.extent11724764 bytes
dc.format.mimetypeapplication/pdf
dc.format.mimetypeapplication/pdf
dc.language.isoengen_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsM.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582
dc.subjectMaterials Science and Engineering.en_US
dc.titleFormation of in-plane crystals of molecular organic semiconductorsen_US
dc.typeThesisen_US
dc.description.degreePh.D.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Materials Science and Engineering
dc.identifier.oclc56029035en_US


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