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dc.contributor.advisorCarl V. Thompson.en_US
dc.contributor.authorKrishnan, Ramkumar, 1975-en_US
dc.contributor.otherMassachusetts Institute of Technology. Dept. of Materials Science and Engineering.en_US
dc.date.accessioned2009-07-01T18:48:33Z
dc.date.available2009-07-01T18:48:33Z
dc.date.copyright2005en_US
dc.date.issued2005en_US
dc.identifier.urihttp://dspace.mit.edu/handle/1721.1/33610en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/33610
dc.descriptionThesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2005.en_US
dc.descriptionMIT Institute Archives copy: p. 301-324 bound in reverse order.en_US
dc.descriptionIncludes bibliographical references (p. 309-324).en_US
dc.description.abstractPorous anodic aluminum oxide (AAO), also known as porous alumina, is a self-ordered nanostructured material well-suited for use in electronic, magnetic, optical and biological applications due to its small pore size (4-200nm) and spacing (10-500nm). Under slightly acidic conditions, both oxidation and dissolution of aluminum leads to the formation of pores. AAO pores form a self-assembled honey-comb structure with short range order over certain ranges of anodic potential and pH. In this work, three key results related to porous AAO science and technology are presented. First, a new theory based on strain-induced instability has been developed from the analysis of results obtained from kinetic studies and stress measurements to explain the formation of AAO pores. Experiments show that excess vacancies of aluminum, created by the dissolution process, generate a large tensile stress and an associated strain energy, which destabilizes the initially flat A1/AAO interface and leads to pore formation. Other factors affecting stability of the Al/AAO interface and the self-assembly process are also presented.en_US
dc.description.abstract(cont.) Second, templated self-assembly (TSA) of AAO pores, ordered over wafer-scale areas and with controlled spacing and symmetry, have been achieved by pre-patterning the substrate using interference lithography. TSA of AAO pores led to control of pore spacing and order symmetry in ranges not achievable without templating. Independent control of pore spacing and diameter were successfully demonstrated, allowing formation of novel 3-D nanostructures such as nanofunnels, fabricated using periodic variations in the anions and/or electrolyte pH. Using the TSA approach, AAO with ordered pores <35nm in diameter and aspect ratios >50:1 were fabricated on Si substrates. A 1-D array of ordered pores, either in or out of plane with the substrate, was fabricated by confining the growth of AAO pores using silicon oxide masks patterned by lithography techniques. Finally, AAO templates were used to fabricate ordered nanostructures including carbon nanotubes, magnetic nanotubes and antidots, and metallic nanowires and nanoparticles, all of which display properties very different from their bulk counterparts.en_US
dc.description.abstract(cont.) These results, and other proposed methodologies, provide new techniques for controlled in-plane and out-of-plane growth and organization of nanotubes and nanowires on Si substrates.en_US
dc.description.statementofresponsibilityby Ramkumar Krishnan.en_US
dc.format.extent324 p.en_US
dc.language.isoengen_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsM.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/33610en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582en_US
dc.subjectMaterials Science and Engineering.en_US
dc.titleTemplated self-assembly of nanoporous alumina : pore formation and ordering mechanisms, methodologies, and applicationsen_US
dc.typeThesisen_US
dc.description.degreePh.D.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Materials Science and Engineering
dc.identifier.oclc64387467en_US


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