Browsing Innovation in Manufacturing Systems and Technology (IMST) by Subject "InGaAsN/GaAs"

Now showing items 1-2 of 2

    • InGaAsN/GaAs Quantum-well Laser Diodes 

      Wang, S.Z.; Yoon, Soon Fatt (2004-01)
      GaAs-based InGaAsN/GaAs quantum well is found to be very sensitive to growth conditions and ex-situ annealing processes. Annealing could drastically increase the optical quality of GaAs-based InGaAsN/GaAs quantum well. As ...

    • Preliminary Results of InGaAsN/GaAs Quantum-well laser Diodes Emitting towards 1.3 µm 

      Wang, S.Z.; Yoon, Soon Fatt (2003-01)
      GaAs-based nitride is found to be sensitive to growth conditions and ex-situ annealing processes. The critical thickness is almost one order thicker than the theoretical prediction by force balance model. The growth process ...