Face-up chemical mechanical polishing : kinematics and material removal rate

Abstract

A working prototype face-up CMP tool has successfully been completed. Experiments conducted on the face-up CMP machine qualitatively correspond with the theoretical polishing model. Discrepancies in data from the theoretical model could potentially be caused by non-uniform loading of the polishing pad and uneven distribution of slurry over the pad due to the edge effects on fluid flow. Despite the discrepancies, experimental data suggest that the theoretical model used to describe blanket wafer polishing by the face-up CMP tool is at least partially valid.