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Novel CMOS-Compatible Optical Platform

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Show simple item record Pitera, Arthur J. Groenert, M. E. Yang, V. K. Lee, Minjoo L. Leitz, Christopher W. Taraschi, G. Cheng, Zhiyuan Fitzgerald, Eugene A. 2003-11-20T22:05:13Z 2003-11-20T22:05:13Z 2003-01
dc.description.abstract A research synopsis is presented summarizing work with integration of Ge and III-V semiconductors and optical devices with Si. III-V GaAs/AlGaAs quantum well lasers and GaAs/AlGaAs optical circuit structures have been fabricated on Si using Ge/GeSi/Si virtual substrates. The lasers fabricated on bulk GaAs showed similar output characteristics as those on Si. The GaAs/AlGaAs lasers fabricated on Si emitted at 858nm and had room temperature cw lifetimes of ~4hours. Straight optical links integrating an LED emitter, waveguide and detector exhibited losses of approximately 144dB/cm. A process for fabrication of a novel CMOS-compatible platform that integrates III-V or Ge layers with Si is demonstrated. Thin Ge layers have been transferred from Ge/GeSi/Si virtual substrates to bulk Si utilizing wafer bonding and an epitaxial Si CMP layer to facilitate virtual substrate planarization. A unique CMP-less method for removal of Ge exfoliation damage induced by the SmartCutâ„¢ process is also presented. en
dc.description.sponsorship Singapore-MIT Alliance (SMA) en
dc.format.extent 886237 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US
dc.relation.ispartofseries Advanced Materials for Micro- and Nano-Systems (AMMNS);
dc.subject chemo-mechanical planarization en
dc.subject GaAs/AlGaAs lasers en
dc.subject GeSi virtual substrates en
dc.subject optical circuit en
dc.subject wafer bonding en
dc.title Novel CMOS-Compatible Optical Platform en
dc.type Article en

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