Novel CMOS-Compatible Optical Platform

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dc.contributor.author	Pitera, Arthur J.
dc.contributor.author	Groenert, M. E.
dc.contributor.author	Yang, V. K.
dc.contributor.author	Lee, Minjoo L.
dc.contributor.author	Leitz, Christopher W.
dc.contributor.author	Taraschi, G.
dc.contributor.author	Cheng, Zhiyuan
dc.contributor.author	Fitzgerald, Eugene A.
dc.date.accessioned	2003-11-20T22:05:13Z
dc.date.available	2003-11-20T22:05:13Z
dc.date.issued	2003-01
dc.identifier.uri	http://hdl.handle.net/1721.1/3714
dc.description.abstract	A research synopsis is presented summarizing work with integration of Ge and III-V semiconductors and optical devices with Si. III-V GaAs/AlGaAs quantum well lasers and GaAs/AlGaAs optical circuit structures have been fabricated on Si using Ge/GeSi/Si virtual substrates. The lasers fabricated on bulk GaAs showed similar output characteristics as those on Si. The GaAs/AlGaAs lasers fabricated on Si emitted at 858nm and had room temperature cw lifetimes of ~4hours. Straight optical links integrating an LED emitter, waveguide and detector exhibited losses of approximately 144dB/cm. A process for fabrication of a novel CMOS-compatible platform that integrates III-V or Ge layers with Si is demonstrated. Thin Ge layers have been transferred from Ge/GeSi/Si virtual substrates to bulk Si utilizing wafer bonding and an epitaxial Si CMP layer to facilitate virtual substrate planarization. A unique CMP-less method for removal of Ge exfoliation damage induced by the SmartCutâ„¢ process is also presented.	en
dc.description.sponsorship	Singapore-MIT Alliance (SMA)	en
dc.format.extent	886237 bytes
dc.format.mimetype	application/pdf
dc.language.iso	en_US
dc.relation.ispartofseries	Advanced Materials for Micro- and Nano-Systems (AMMNS);
dc.subject	chemo-mechanical planarization	en
dc.subject	GaAs/AlGaAs lasers	en
dc.subject	GeSi virtual substrates	en
dc.subject	optical circuit	en
dc.subject	wafer bonding	en
dc.title	Novel CMOS-Compatible Optical Platform	en
dc.type	Article	en