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dc.contributor.authorPitera, Arthur J.
dc.contributor.authorGroenert, M. E.
dc.contributor.authorYang, V. K.
dc.contributor.authorLee, Minjoo L.
dc.contributor.authorLeitz, Christopher W.
dc.contributor.authorTaraschi, G.
dc.contributor.authorCheng, Zhiyuan
dc.contributor.authorFitzgerald, Eugene A.
dc.date.accessioned2003-11-20T22:05:13Z
dc.date.available2003-11-20T22:05:13Z
dc.date.issued2003-01
dc.identifier.urihttp://hdl.handle.net/1721.1/3714
dc.description.abstractA research synopsis is presented summarizing work with integration of Ge and III-V semiconductors and optical devices with Si. III-V GaAs/AlGaAs quantum well lasers and GaAs/AlGaAs optical circuit structures have been fabricated on Si using Ge/GeSi/Si virtual substrates. The lasers fabricated on bulk GaAs showed similar output characteristics as those on Si. The GaAs/AlGaAs lasers fabricated on Si emitted at 858nm and had room temperature cw lifetimes of ~4hours. Straight optical links integrating an LED emitter, waveguide and detector exhibited losses of approximately 144dB/cm. A process for fabrication of a novel CMOS-compatible platform that integrates III-V or Ge layers with Si is demonstrated. Thin Ge layers have been transferred from Ge/GeSi/Si virtual substrates to bulk Si utilizing wafer bonding and an epitaxial Si CMP layer to facilitate virtual substrate planarization. A unique CMP-less method for removal of Ge exfoliation damage induced by the SmartCutâ„¢ process is also presented.en
dc.description.sponsorshipSingapore-MIT Alliance (SMA)en
dc.format.extent886237 bytes
dc.format.mimetypeapplication/pdf
dc.language.isoen_US
dc.relation.ispartofseriesAdvanced Materials for Micro- and Nano-Systems (AMMNS);
dc.subjectchemo-mechanical planarizationen
dc.subjectGaAs/AlGaAs lasersen
dc.subjectGeSi virtual substratesen
dc.subjectoptical circuiten
dc.subjectwafer bondingen
dc.titleNovel CMOS-Compatible Optical Platformen
dc.typeArticleen


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