dc.contributor.author | Gan, C.L. | |
dc.contributor.author | Thompson, Carl V. | |
dc.contributor.author | Pey, Kin Leong | |
dc.contributor.author | Choi, Wee Kiong | |
dc.date.accessioned | 2003-11-29T19:49:07Z | |
dc.date.available | 2003-11-29T19:49:07Z | |
dc.date.issued | 2003-01 | |
dc.identifier.uri | http://hdl.handle.net/1721.1/3730 | |
dc.description.abstract | Electromigration tests on different Cu dual-damascene interconnect tree structures consisting of various numbers of straight via-to-via lines connected at the common middle terminal have been carried out. Like Al-based interconnects, the reliability of a segment in a Cu-based interconnect tree strongly depends on the stress conditions of connected segments. The analytic model based on a nodal analysis developed for Al trees gives a conservative estimate of the lifetime of Cu-based interconnect trees. However, there are important differences in the results obtained under similar test conditions for Al-based and Cu-based interconnect trees. These differences are attributed to the variations in the architectural schemes of the two metallization systems. The absence of a conducting electromigration-resistant overlayer in Cu technology and the low critical stress for void nucleation at the Cu/inter-level diffusion barrier (i.e. Si₃N₄) interface leads to different failure modes between Cu and Al interconnects. As a result, the most highly stressed segment in a Cu-based interconnect tree is not always the least reliable. Moreover, the possibility of liner rupture at stressed dual-damascene vias leads to significant differences in tree reliabilities in Cu compared to Al. While an interconnect tree can be treated as a fundamental unit whose reliability is independent of that of other units in Al-based interconnect architectures, interconnect trees can not be treated as fundamental units for circuit-level reliability analyses for Cu-based interconnects. | en |
dc.description.sponsorship | Singapore-MIT Alliance (SMA) | en |
dc.format.extent | 180049 bytes | |
dc.format.mimetype | application/pdf | |
dc.language.iso | en_US | |
dc.relation.ispartofseries | Advanced Materials for Micro- and Nano-Systems (AMMNS); | |
dc.subject | copper dual-damascene interconnect trees | en |
dc.subject | electromigration | en |
dc.subject | via-to-via | en |
dc.subject | dotted-I interconnect trees | en |
dc.subject | levels of metallization | en |
dc.title | Reliability of Multi-Terminal Copper Dual-Damascene Interconnect Trees | en |
dc.type | Article | en |