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Reliability of Multi-Terminal Copper Dual-Damascene Interconnect Trees

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dc.contributor.author Gan, C.L.
dc.contributor.author Thompson, Carl V.
dc.contributor.author Pey, Kin Leong
dc.contributor.author Choi, Wee Kiong
dc.date.accessioned 2003-11-29T19:49:07Z
dc.date.available 2003-11-29T19:49:07Z
dc.date.issued 2003-01
dc.identifier.uri http://hdl.handle.net/1721.1/3730
dc.description.abstract Electromigration tests on different Cu dual-damascene interconnect tree structures consisting of various numbers of straight via-to-via lines connected at the common middle terminal have been carried out. Like Al-based interconnects, the reliability of a segment in a Cu-based interconnect tree strongly depends on the stress conditions of connected segments. The analytic model based on a nodal analysis developed for Al trees gives a conservative estimate of the lifetime of Cu-based interconnect trees. However, there are important differences in the results obtained under similar test conditions for Al-based and Cu-based interconnect trees. These differences are attributed to the variations in the architectural schemes of the two metallization systems. The absence of a conducting electromigration-resistant overlayer in Cu technology and the low critical stress for void nucleation at the Cu/inter-level diffusion barrier (i.e. Si₃N₄) interface leads to different failure modes between Cu and Al interconnects. As a result, the most highly stressed segment in a Cu-based interconnect tree is not always the least reliable. Moreover, the possibility of liner rupture at stressed dual-damascene vias leads to significant differences in tree reliabilities in Cu compared to Al. While an interconnect tree can be treated as a fundamental unit whose reliability is independent of that of other units in Al-based interconnect architectures, interconnect trees can not be treated as fundamental units for circuit-level reliability analyses for Cu-based interconnects. en
dc.description.sponsorship Singapore-MIT Alliance (SMA) en
dc.format.extent 180049 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US
dc.relation.ispartofseries Advanced Materials for Micro- and Nano-Systems (AMMNS);
dc.subject copper dual-damascene interconnect trees en
dc.subject electromigration en
dc.subject via-to-via en
dc.subject dotted-I interconnect trees en
dc.subject levels of metallization en
dc.title Reliability of Multi-Terminal Copper Dual-Damascene Interconnect Trees en
dc.type Article en


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