Wafer-Level Thermocompression Bonds

dc.contributor.author	Tsau, Christine H.
dc.contributor.author	Schmidt, Martin A.
dc.contributor.author	Spearing, S. Mark
dc.date.accessioned	2003-11-29T19:55:08Z
dc.date.available	2003-11-29T19:55:08Z
dc.date.issued	2003-01
dc.identifier.uri	http://hdl.handle.net/1721.1/3733
dc.description.abstract	Thermocompression bonding of gold is a promising technique for achieving low temperature, wafer-level bonding without the application of an electric field or complicated pre-bond cleaning procedure. The presence of a ductile layer influences the fracture behavior of the bonds. The fabrication process was described. In addition, the effect of plasticity was explored by varying the gold bonding thickness between 0.23 to 1.4 µm. Wafers were bonded at 300°C and two different pressures: 1.25 and 7 MPa. The bond toughness of the specimens were characterized using a four-point bend delamination technique. Cohesive failure was found to be the dominant fracture mode in the thicker films. Bonds made with thin gold films failed adhesively and at lower strain energy release rates.	en
dc.description.sponsorship	Singapore-MIT Alliance (SMA)	en
dc.format.extent	618003 bytes
dc.format.mimetype	application/pdf
dc.language.iso	en_US
dc.relation.ispartofseries	Advanced Materials for Micro- and Nano-Systems (AMMNS);
dc.subject	wafer bonding	en
dc.subject	thermocompression bonding	en
dc.subject	plasticity	en
dc.title	Wafer-Level Thermocompression Bonds	en
dc.type	Article	en