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An organic thin-film transistor circuit for large-area temperature-sensing

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dc.contributor.advisor Charles G. Sodini. en_US
dc.contributor.author He, David Da en_US
dc.contributor.other Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science. en_US
dc.date.accessioned 2009-06-30T16:23:48Z
dc.date.available 2009-06-30T16:23:48Z
dc.date.copyright 2008 en_US
dc.date.issued 2008 en_US
dc.identifier.uri http://hdl.handle.net/1721.1/45833
dc.description Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2008. en_US
dc.description Includes bibliographical references (leaves 81-84). en_US
dc.description.abstract This thesis explores the application of organic thin-film transistors (OTFTs) for temperature-sensing. The goal of this work is twofold: the understanding of the OTFT's electrical characteristics' temperature dependence, and the creation of OTFT temperature-sensing circuits. We find that OTFTs have temperature-dependent current-voltage (I-V) characteristics that are determined by trap states inside the bandgap. Based on this understanding, a DC OTFT circuit model is developed which accurately fits the measured I-V data in all regions of device operation and at different temperatures. Using this model, we design and fabricate two OTFT temperature-sensing circuits. The first circuit achieves a responsivity of 22mV/°C with 12nW of power dissipation, but has a nonlinear temperature response that is dependent on threshold voltage shifts. The second circuit achieves a responsivity of 5.9mV/°C with 88nW of power dissipation, and has a highly linear temperature response that is tolerant of threshold voltage shifts. Both circuits exceed silicon temperature sensors' typical temperature responsivity of 0.5 - 4mrV/C while dissipating less power. These traits, along with the OTFT's ability to be fabricated on large-area and flexible substrates, allow OTFT temperature sensors to be used in both existing and new application environments. en_US
dc.description.statementofresponsibility by David Da He. en_US
dc.format.extent 84 leaves en_US
dc.language.iso eng en_US
dc.publisher Massachusetts Institute of Technology en_US
dc.rights M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. en_US
dc.rights.uri http://dspace.mit.edu/handle/1721.1/7582 en_US
dc.subject Electrical Engineering and Computer Science. en_US
dc.title An organic thin-film transistor circuit for large-area temperature-sensing en_US
dc.type Thesis en_US
dc.description.degree S.M. en_US
dc.contributor.department Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science. en_US
dc.identifier.oclc 319548321 en_US


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