Near room temperature lithographically processed metal-oxide transistors
Name
413972514-MIT.pdf
Description
Full printable version
Size
40.49 MB
Format
Adobe PDF
Checksum (MD5)
28043c7281c0c3df6815de2158e31fd5
Author(s)
Tang, Hui, M. Eng. Massachusetts Institute of Technology
Advisor(s)
Vladimir Bulovic.
Date Issued
2008
Publisher
Massachusetts Institute of Technology
Abstract
A fully lithographic process at near-room-temperature was developed for the purpose of fabricating transistors based on metal-oxide channel materials. The combination of indium tin oxide (ITO) as the source/drain electrodes, zinc indium oxide (ZIO) as the semiconducting channel, and parylene as the dielectric was used to demonstrate the feasibility of such a low temperature lithographic process. This low processing temperature, roughly 150 C, enables the use of unconventional substrates such as glass or plastics, and can therefore simplify the fabrication of devices for low-cost, large-area electronics.
Description
Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2008.
Includes bibliographical references (p. 75-76).
Subjects
Electrical Engineering and Computer Science.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Terms of Use
M.I.T. theses are protected by
copyright. They may be viewed from this source for any purpose, but
reproduction or distribution in any format is prohibited without written
permission. See provided URL for inquiries about permission.
copyright. They may be viewed from this source for any purpose, but
reproduction or distribution in any format is prohibited without written
permission. See provided URL for inquiries about permission.
Persistent DSpace Link
