Browsing RLE Progress Report, No. 131 (1988) by Subject "High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFET's) for Telecommunications"
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High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFET's) for Telecommunications
(Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT), 1988-01-01)