Kinetic Phenomena in Thin Film Electronic Materials
Author:
Kim, Hyoung-June; Palmer, Joyce E.; Thompson, Carl V.; Smith, Henry I.; Jiran, Eva; Atwater, Harry A.; Schott, Stephen C.; Wong, Chee C.; Garrison, Stephen M.; Im, James S.; Smith, David A.; Frost, Harold J.; Srolovitz, David J.; Maiorino, Cesar D.; Privost, Larry; Clevenger, Lawrence A.; Tu, King-Ning
Publisher:
Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT)
Date Issued:
1985-01
Description:
Contains reports on ten research projects.
Other Identifiers:
RLE_PR_127_02
Is Part Of:
Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1985
Kinetic Phenomena in Thin Film Electronic Materials
Series/Report no.:
Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 127
Keywords:
Kinetic Phenomena in Thin Film Electronic Materials, Surface-Energy-Driven Secondary Grain Growth in Ultrathin (˂1000 A) Films of Silicon, Surface-Energy-Driven Secondary Grain Growth in Ultrathin (˂1000 A) Films of Germanium, Metastable Phase Formation in Lithographically Defined Particles of Semiconductors, Zone Melting Recrystallization of Silicon Films, Zone Melting Recrystallization of Germanium Films, Graphoepitaxy of Si, Graphoepitaxy of Ge, Graphoepitaxy of Model Materials, Properties of Grain Boundaries with Controlled Orientations in Thin Silicon Films, Properties of Grain Boundaries with Controlled Locations in Thin Silicon Films, Modeling of Grain Formation in Thin Films, Modeling of Grain Growth in Thin Films, Modeling of Beading in Thin Films, Grain Growth in Thin Films, Grain Growth in Thin Films Lines, Electrical Properties of Interconnect Lines with Controlled Microstructures, Kinetics of Silicide Formation at Refractory Metal-Silicon Contacts
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