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dc.contributor.authorKim, Hyoung-Juneen_US
dc.contributor.authorPalmer, Joyce E.en_US
dc.contributor.authorThompson, Carl V.en_US
dc.contributor.authorSmith, Henry I.en_US
dc.contributor.authorJiran, Evaen_US
dc.contributor.authorAtwater, Harry A.en_US
dc.contributor.authorSchott, Stephen C.en_US
dc.contributor.authorWong, Chee C.en_US
dc.contributor.authorGarrison, Stephen M.en_US
dc.contributor.authorIm, James S.en_US
dc.contributor.authorSmith, David A.en_US
dc.contributor.authorFrost, Harold J.en_US
dc.contributor.authorSrolovitz, David J.en_US
dc.contributor.authorMaiorino, Cesar D.en_US
dc.contributor.authorPrivost, Larryen_US
dc.contributor.authorClevenger, Lawrence A.en_US
dc.contributor.authorTu, King-Ningen_US
dc.date.accessioned2010-07-15T21:56:29Z
dc.date.available2010-07-15T21:56:29Z
dc.date.issued1985-01en_US
dc.identifierRLE_PR_127_02en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/56928
dc.descriptionContains reports on ten research projects.en_US
dc.description.sponsorshipSemiconductor Research Corporation (Grant 83-01-033)en_US
dc.description.sponsorshipNational Science Foundation (Grant DMR 81-19285)en_US
dc.description.sponsorshipU.S. Department of Energy (Contract DE-ACO2-82-ER-13019)en_US
dc.description.sponsorshipNational Science Foundation (Grant ECS82-05701)en_US
dc.description.sponsorshipInternational Business Machines, Inc.en_US
dc.description.sponsorshipDartmouth Universityen_US
dc.description.sponsorshipJoint Services Electronics Program (Contract DAAG29-83-K-0003)en_US
dc.language.isoenen_US
dc.publisherResearch Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT)en_US
dc.relation.ispartofMassachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1985en_US
dc.relation.ispartofKinetic Phenomena in Thin Film Electronic Materialsen_US
dc.relation.ispartofseriesMassachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 127en_US
dc.rightsCopyright (c) 2008 by the Massachusetts Institute of Technology. All rights reserved.en_US
dc.subject.otherKinetic Phenomena in Thin Film Electronic Materialsen_US
dc.subject.otherSurface-Energy-Driven Secondary Grain Growth in Ultrathin (˂1000 A) Films of Siliconen_US
dc.subject.otherSurface-Energy-Driven Secondary Grain Growth in Ultrathin (˂1000 A) Films of Germaniumen_US
dc.subject.otherMetastable Phase Formation in Lithographically Defined Particles of Semiconductorsen_US
dc.subject.otherZone Melting Recrystallization of Silicon Filmsen_US
dc.subject.otherZone Melting Recrystallization of Germanium Filmsen_US
dc.subject.otherGraphoepitaxy of Sien_US
dc.subject.otherGraphoepitaxy of Geen_US
dc.subject.otherGraphoepitaxy of Model Materialsen_US
dc.subject.otherProperties of Grain Boundaries with Controlled Orientations in Thin Silicon Filmsen_US
dc.subject.otherProperties of Grain Boundaries with Controlled Locations in Thin Silicon Filmsen_US
dc.subject.otherModeling of Grain Formation in Thin Filmsen_US
dc.subject.otherModeling of Grain Growth in Thin Filmsen_US
dc.subject.otherModeling of Beading in Thin Filmsen_US
dc.subject.otherGrain Growth in Thin Filmsen_US
dc.subject.otherGrain Growth in Thin Films Linesen_US
dc.subject.otherElectrical Properties of Interconnect Lines with Controlled Microstructuresen_US
dc.subject.otherKinetics of Silicide Formation at Refractory Metal-Silicon Contactsen_US
dc.titleKinetic Phenomena in Thin Film Electronic Materialsen_US
dc.typeTechnical Reporten_US


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