Kinetic Phenomena in Thin Film Electronic Materials
Citable URI:
http://hdl.handle.net/1721.1/56955
| Title: | Kinetic Phenomena in Thin Film Electronic Materials |
| Author: | Kim, Hyoung-June; Palmer, Joyce E.; Atwater, Harry A.; Thompson, Carl V.; Smith, Henry I.; Jiran, Eva; Tomita, Hisashi; Im, James S.; Schott, Stephen C.; Wong, Chee C.; Garrison, Stephen M.; Smith, David A.; Cammarata, Robert C.; Clevenger, Lawrence A.; Tu, King-Ning; Frost, Harold J.; Maorino, Cesar D.; Longworth, Hai P.; Privost, Lawrence; Cho, Jaeshin |
| Publisher: | Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT) |
| Issue Date: | 1986-01 |
| Description: | Contains reports on nine research projects. |
| URI: | http://hdl.handle.net/1721.1/56955 |
| Other Identifiers: | RLE_PR_128_02 |
| Is Part Of | Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1986 Kinetic Phenomena in Thin Film Electronic Materials |
| Series/Report no.: | Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 128 |
| Keywords: | Kinetic Phenomena in Thin Film Electronic Materials, Surface-Energy-Driven Secondary Grain Growth in Ultrathin (˂1000Å) Films of Silicon, Surface-Energy-Driven Secondary Grain Growth in Ultrathin (˂1000Å) Films of Germanium, Metastable Phase Formation in Lithographically Defined Particles of Semiconductors, Zone Melting Recrystallization of Silicon Films, Zone Melting Recrystallization of Germanium Films, Graphoepitaxy of Si, Graphoepitaxy of Ge, Graphoepitaxy of Model Materials, Properties of Grain Boundaries with Controlled Orientations in Thin Silicon Films, Properties of Grain Boundaries with Controlled Locations in Thin Silicon Films, Kinetics of Silicide Formation at Refractory Metal-Silicon Contacts, Modeling of Grain Formation in Thin Films, Modeling of Grain Growth in Thin Films, Grain Growth in Thin Films of Aluminum, Thin and Narrow Metallic Interconnects |
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| RLE_PR_128_02.pdf | 423.2Kb |
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