Submicron Structures Technology and Research

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Submicron Structures Technology and Research

Author: Anderson, Erik H.; Burkhardt, Martin; Carter, James M.; Chu, William; Early, Kathleen R.; Ku, Yao-Ching; Quek, Hui Meng; Moel, Alberto; Schattenburg, Mark L.; Smith, Henry I.; Yen, Anthony T.; Plotnik, Irving; Kawata, Hiroaki; Antoniadis, Dimitri A.; Field, Stuart B.; Kastner, Marc A.; Licini, Jerome C.; Meirav, Udi; Park, Samuel L.; Scott-Thomas, John H. F.; Bagwell, Phillip F.; Orlando, Terry P.; Ismail, Khalid; Meyer, Paul; Shahidi, Ghavam G.; The, Siang-Chun; Ajuria, Sergio; Floro, Jerrold A.; Thompson, Carl V., III; Palmer, Joyce E.; Canizares, Claude R.

Citable URI: http://hdl.handle.net/1721.1/57073

Publisher: Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT)

Date Issued: 1988-01-01

Description:

Contains table of contents for Part I, table of contents for Section 1 and reports on fourteen research projects.

URI: http://hdl.handle.net/1721.1/57073

Other Identifiers: RLE_PR_131_01_01s_01

Is Part Of: Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1988
Solid State Physics, Electronics And Optics
Materials and Fabrication
Submicron Structures Technology and Research

Series/Report no.: Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 131

Keywords: Submicron Structures Technology, Submicron Structures Research, Submicron Structures Laboratory, Microfabrication at Linewidths of 100nm and Below, Improved Mask Technology For X-Ray Lithography, Optical Projection Lithography Using Lenses of High Numerical Aperture, Electronic Conduction In One-Dimensional Semiconductor Devices, Surface Superlattice Formation In Silicon Inversion Layers Using 0.2μm-Period Grating-Gate Field-Effect Transistors, Surface Superlattice Formation in GaAs/GaAIAs Modulation Doped Field-Effect Transistors, One-Dimensional Subbands in GaAs/AIGaAs Quantum Wires, Mobility Modulation in GaAs/AIGaAs Quantum Wires, Electron Transport In Si MOSFETs With Deep-Submicron Channel Lengths, Crystalline Films On Amorphous Substrates, Epitaxy via Surface-Energy-Driven Grain Growth, Submicrometer-Period Gold Transmission Gratings for X-Ray Spectroscopy, Submicrometer-Period Gold Transmission Gratings for Atom-Beam Interferometry, High-Dispersion, High-Efficiency Transmission Gratings for Astrophysical X-Ray Spectroscopy, Soft X-Ray Interferometer Gratings

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