Focused Ion Beam Fabrication

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Focused Ion Beam Fabrication

Author: Melngailis, John; Lezec, Henri J.; Shepard, Mark I.; Musil, Christian R.; Murguia, James E.; Zamani, Susan; Ismail, Khalid; Mahoney, Leonard J.; Antoniadis, Dimitri A.; Ro, Jaesang; Blauner, Patricia G.; Butt, Yousaf; Thompson, Carl V., III; Dubner, Andrew D.; Wagner, Alan; Herndon, Terry O.

Citable URI: http://hdl.handle.net/1721.1/57076

Publisher: Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT)

Date Issued: 1988-01-01

Description:

Contains reports on eight research projects.

URI: http://hdl.handle.net/1721.1/57076

Other Identifiers: RLE_PR_131_01_01s_03

Is Part Of: Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1988
Solid State Physics, Electronics And Optics
Materials and Fabrication
Focused Ion Beam Fabrication

Series/Report no.: Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 131

Keywords: Focused Ion Beam Fabrication, Focused Ion Beam Program, Development of Focused Ion Beam Lithography, Development of Focused Ion Beam Patterning, Frequency Tunable Gunn Diodes Fabricated by Focused Ion Beam Implantation, Field-Effect Transistors with Focused Ion Beam Implanted Channel Regions, Microstructure of Gold Films Produced by Ion Induced Deposition, Properties of Gold Films Produced by Ion Induced Deposition, Focused Ion Beam Induced Depostion of Submicrometer Structures, In-Situ Measurement of Gas Adsorption, In-Situ Measurement of Ion Induced Deposition, Planar Vias through Si₃N₄ and SiO₂ Fabricated by Focused Ion Beam Implantation

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