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dc.contributor.authorMelngailis, Johnen_US
dc.contributor.authorLezec, Henri J.en_US
dc.contributor.authorShepard, Mark I.en_US
dc.contributor.authorMusil, Christian R.en_US
dc.contributor.authorMurguia, James E.en_US
dc.contributor.authorZamani, Susanen_US
dc.contributor.authorIsmail, Khaliden_US
dc.contributor.authorMahoney, Leonard J.en_US
dc.contributor.authorAntoniadis, Dimitri A.en_US
dc.contributor.authorRo, Jaesangen_US
dc.contributor.authorBlauner, Patricia G.en_US
dc.contributor.authorButt, Yousafen_US
dc.contributor.authorThompson, Carl V., IIIen_US
dc.contributor.authorDubner, Andrew D.en_US
dc.contributor.authorWagner, Alanen_US
dc.contributor.authorHerndon, Terry O.en_US
dc.date.accessioned2010-07-16T04:03:11Z
dc.date.available2010-07-16T04:03:11Z
dc.date.issued1988-01-01 to 1988-12-31en_US
dc.identifierRLE_PR_131_01_01s_03en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/57076
dc.descriptionContains reports on eight research projects.en_US
dc.description.sponsorshipDARPA/Naval Electronics Systems Command (Contract MDA 903-85-C-0215)en_US
dc.description.sponsorshipDARPA/U.S. Army Research Office (Contract DAAL03-88-K-0108)en_US
dc.description.sponsorshipU.S. Army Research Office (Contract DAAL03-87-K-0126)en_US
dc.description.sponsorshipCharles Stark Draper Laboratoryen_US
dc.description.sponsorshipInternational Business Machines Corporation - Research Division, General Technologies Divisionen_US
dc.description.sponsorshipU.S. Air Forceen_US
dc.description.sponsorshipDARPAen_US
dc.language.isoenen_US
dc.publisherResearch Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT)en_US
dc.relation.ispartofMassachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1988en_US
dc.relation.ispartofSolid State Physics, Electronics And Opticsen_US
dc.relation.ispartofMaterials and Fabricationen_US
dc.relation.ispartofFocused Ion Beam Fabricationen_US
dc.relation.ispartofseriesMassachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 131en_US
dc.rightsCopyright (c) 2008 by the Massachusetts Institute of Technology. All rights reserved.en_US
dc.subject.otherFocused Ion Beam Fabricationen_US
dc.subject.otherFocused Ion Beam Programen_US
dc.subject.otherDevelopment of Focused Ion Beam Lithographyen_US
dc.subject.otherDevelopment of Focused Ion Beam Patterningen_US
dc.subject.otherFrequency Tunable Gunn Diodes Fabricated by Focused Ion Beam Implantationen_US
dc.subject.otherField-Effect Transistors with Focused Ion Beam Implanted Channel Regionsen_US
dc.subject.otherMicrostructure of Gold Films Produced by Ion Induced Depositionen_US
dc.subject.otherProperties of Gold Films Produced by Ion Induced Depositionen_US
dc.subject.otherFocused Ion Beam Induced Depostion of Submicrometer Structuresen_US
dc.subject.otherIn-Situ Measurement of Gas Adsorptionen_US
dc.subject.otherIn-Situ Measurement of Ion Induced Depositionen_US
dc.subject.otherPlanar Vias through Si₃N₄ and SiO₂ Fabricated by Focused Ion Beam Implantationen_US
dc.titleFocused Ion Beam Fabricationen_US
dc.typeTechnical Reporten_US


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