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Ultralow Temperature Studies of Nanometer Size Semiconductor Devices

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Ultralow Temperature Studies of Nanometer Size Semiconductor Devices

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Author: Kastner, Marc A.; Antoniadis, Dimitri A.; Field, Stuart B.; Smith, Henry I.; Heiblum, Mordehai; Wind, Shalom; Meirav, Udi; Park, Samuel L.; Scott-Thomas, John H. F.; Odoardi, Angela R.
Publisher: Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT)
Date Issued: 1989-01-01
Description:
Contains a description on one research project.
URI: http://hdl.handle.net/1721.1/57126
Other Identifiers: RLE_PR_132_01_03s_04
Is Part Of: Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1989
Solid State Physics, Electronics and Optics
Surfaces and Interfaces
Ultralow Temperature Studies of Nanometer Size Semiconductor Devices
Series/Report no.: Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 132
Keywords: Ultralow Temperature Studies of Nanometer Size Semiconductor Devices, Project Description

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