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Ultralow Temperature Studies of Nanometer Size Semiconductor Devices

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dc.contributor.author Kastner, Marc A. en_US
dc.contributor.author Antoniadis, Dimitri A. en_US
dc.contributor.author Field, Stuart B. en_US
dc.contributor.author Smith, Henry I. en_US
dc.contributor.author Heiblum, Mordehai en_US
dc.contributor.author Wind, Shalom en_US
dc.contributor.author Meirav, Udi en_US
dc.contributor.author Park, Samuel L. en_US
dc.contributor.author Scott-Thomas, John H. F. en_US
dc.contributor.author Odoardi, Angela R. en_US
dc.date.accessioned 2010-07-16T04:12:37Z
dc.date.available 2010-07-16T04:12:37Z
dc.date.issued 1989-01-01 to 1989-12-31 en_US
dc.identifier RLE_PR_132_01_03s_04 en_US
dc.identifier.uri http://hdl.handle.net/1721.1/57126
dc.description Contains a description on one research project. en_US
dc.description.sponsorship Joint Services Electronics Program DAAL03-89-C-0001 en_US
dc.language.iso en en_US
dc.publisher Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT) en_US
dc.relation.ispartof Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1989 en_US
dc.relation.ispartof Solid State Physics, Electronics and Optics en_US
dc.relation.ispartof Surfaces and Interfaces en_US
dc.relation.ispartof Ultralow Temperature Studies of Nanometer Size Semiconductor Devices en_US
dc.relation.ispartofseries Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 132 en_US
dc.rights Copyright (c) 2008 by the Massachusetts Institute of Technology. All rights reserved. en_US
dc.subject.other Ultralow Temperature Studies of Nanometer Size Semiconductor Devices en_US
dc.subject.other Project Description en_US
dc.title Ultralow Temperature Studies of Nanometer Size Semiconductor Devices en_US
dc.type Technical Report en_US


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