Ultralow Temperature Studies of Nanometer Size Semiconductor Devices

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dc.contributor.author	Kastner, Marc A.	en_US
dc.contributor.author	Antoniadis, Dimitri A.	en_US
dc.contributor.author	Field, Stuart B.	en_US
dc.contributor.author	Smith, Henry I.	en_US
dc.contributor.author	Heiblum, Mordehai	en_US
dc.contributor.author	Wind, Shalom	en_US
dc.contributor.author	Meirav, Udi	en_US
dc.contributor.author	Park, Samuel L.	en_US
dc.contributor.author	Scott-Thomas, John H. F.	en_US
dc.contributor.author	Odoardi, Angela R.	en_US
dc.date.accessioned	2010-07-16T04:12:37Z
dc.date.available	2010-07-16T04:12:37Z
dc.date.issued	1989-01-01 to 1989-12-31	en_US
dc.identifier	RLE_PR_132_01_03s_04	en_US
dc.identifier.uri	http://hdl.handle.net/1721.1/57126
dc.description	Contains a description on one research project.	en_US
dc.description.sponsorship	Joint Services Electronics Program DAAL03-89-C-0001	en_US
dc.language.iso	en	en_US
dc.publisher	Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT)	en_US
dc.relation.ispartof	Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1989	en_US
dc.relation.ispartof	Solid State Physics, Electronics and Optics	en_US
dc.relation.ispartof	Surfaces and Interfaces	en_US
dc.relation.ispartof	Ultralow Temperature Studies of Nanometer Size Semiconductor Devices	en_US
dc.relation.ispartofseries	Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 132	en_US
dc.rights	Copyright (c) 2008 by the Massachusetts Institute of Technology. All rights reserved.	en_US
dc.subject.other	Ultralow Temperature Studies of Nanometer Size Semiconductor Devices	en_US
dc.subject.other	Project Description	en_US
dc.title	Ultralow Temperature Studies of Nanometer Size Semiconductor Devices	en_US
dc.type	Technical Report	en_US