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High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFETs) for Telecommunications

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dc.contributor.author del Alamo, Jesus A. en_US
dc.contributor.author Bahl, Sandeep R. en_US
dc.contributor.author Azzam, Walid en_US
dc.contributor.author Leary, Michael H. en_US
dc.contributor.author Odoardi, Angela R. en_US
dc.date.accessioned 2010-07-16T04:22:34Z
dc.date.available 2010-07-16T04:22:34Z
dc.date.issued 1990-01-01 to 1990-12-31 en_US
dc.identifier RLE_PR_133_01_01s_07 en_US
dc.identifier.uri http://hdl.handle.net/1721.1/57162
dc.description Contains an introduction, reports on two research projects and a list of publications and conference papers. en_US
dc.description.sponsorship Charles S. Draper Laboratory Contract DL-H-418488 en_US
dc.description.sponsorship Joint Services Electronics Program Contract DAAL03-89-C-0001 en_US
dc.language.iso en en_US
dc.publisher Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT) en_US
dc.relation.ispartof Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1990 en_US
dc.relation.ispartof Solid State Physics, Electronics and Optics en_US
dc.relation.ispartof Materials and Fabrication en_US
dc.relation.ispartof High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFETs) for Telecommunications en_US
dc.relation.ispartofseries Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 133 en_US
dc.rights Copyright (c) 2008 by the Massachusetts Institute of Technology. All rights reserved. en_US
dc.subject.other High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFETs) for Telecommunications en_US
dc.subject.other Strained-channel InAIAs/n⁺ - InGaAs MIDFETs en_US
dc.subject.other Orientation Dependence of Mismatched-Insulator InAIAs/n⁺-InGaAs MIDFETs en_US
dc.subject.other Publications en_US
dc.subject.other Conference Papers en_US
dc.title High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFETs) for Telecommunications en_US
dc.type Technical Report en_US


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