High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFETs) for Telecommunications
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| dc.contributor.author | del Alamo, Jesus A. | en_US |
| dc.contributor.author | Bahl, Sandeep R. | en_US |
| dc.contributor.author | Azzam, Walid | en_US |
| dc.contributor.author | Leary, Michael H. | en_US |
| dc.contributor.author | Odoardi, Angela R. | en_US |
| dc.date.accessioned | 2010-07-16T04:22:34Z | |
| dc.date.available | 2010-07-16T04:22:34Z | |
| dc.date.issued | 1990-01-01 to 1990-12-31 | en_US |
| dc.identifier | RLE_PR_133_01_01s_07 | en_US |
| dc.identifier.uri | http://hdl.handle.net/1721.1/57162 | |
| dc.description | Contains an introduction, reports on two research projects and a list of publications and conference papers. | en_US |
| dc.description.sponsorship | Charles S. Draper Laboratory Contract DL-H-418488 | en_US |
| dc.description.sponsorship | Joint Services Electronics Program Contract DAAL03-89-C-0001 | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT) | en_US |
| dc.relation.ispartof | Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1990 | en_US |
| dc.relation.ispartof | Solid State Physics, Electronics and Optics | en_US |
| dc.relation.ispartof | Materials and Fabrication | en_US |
| dc.relation.ispartof | High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFETs) for Telecommunications | en_US |
| dc.relation.ispartofseries | Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 133 | en_US |
| dc.rights | Copyright (c) 2008 by the Massachusetts Institute of Technology. All rights reserved. | en_US |
| dc.subject.other | High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFETs) for Telecommunications | en_US |
| dc.subject.other | Strained-channel InAIAs/n⁺ - InGaAs MIDFETs | en_US |
| dc.subject.other | Orientation Dependence of Mismatched-Insulator InAIAs/n⁺-InGaAs MIDFETs | en_US |
| dc.subject.other | Publications | en_US |
| dc.subject.other | Conference Papers | en_US |
| dc.title | High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFETs) for Telecommunications | en_US |
| dc.type | Technical Report | en_US |
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| Name | Size | Format | Description |
|---|---|---|---|
| RLE_PR_133_01_01s ... | 3.447Mb |
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