Submicron and Nanometer Structures Technology and Research
Citable URI:
http://hdl.handle.net/1721.1/57185
| Title: | Submicron and Nanometer Structures Technology and Research |
| Author: | Smith, Henry I.; Burkhardt, Martin; Carter, James M.; Chu, William; Early, Kathleen R.; Ghanbari, Reza A.; Hector, Scott D.; Ku, Yao-Ching; Moel, Alberto M.; Rittenhouse, George E.; Schattenburg, Mark L.; Wong, Vincent V.; Yen, Anthony T.; Ferrera, Juan; Mondol, Mark K.; Ng, Lee-Peng; Tsai, Flora S.; Yunus, Sabah; Antoniadis, Dimitri A.; Chung, James E.; Fang, Hao; Hu, Hang; Su, Lisa T-F.; Kastner, Marc A.; Kumar, Arvind; Orlando, Terry P.; del Alamo, Jesús A.; Eugster, Cristopher C.; Moon, Euclid E.; Shayegan, M.; Tsui, Daniel; Zhao, Yang; Chou, Michael T.; Choi, Woo-Young; Damask, Jay N.; Fonstad, Clifton G., Jr.; Haus, Hermann A.; Kolodziejski, Leslie A.; Wong, Vincent V.; Graybeal, John M.; Meyerson, Bernard S.; Olster, Daniel B.; Canizares, Claude R.; Fleming, Robert C., Jr.; Nenonen, Seppo; Bristowe, Paul D.; Carel, Roland; Floro, Jerrold A.; Thompson, Carl V.; Yee, Kenneth; Ismail, Khalid; Karam, Nasser |
| Publisher: | Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT) |
| Issue Date: | 1991-01-01 |
| Description: | Contains reports on sixteen research projects and a list of publications. |
| URI: | http://hdl.handle.net/1721.1/57185 |
| Other Identifiers: | RLE_PR_134_01_02s_04 |
| Is Part Of | Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1991 Solid State Physics, Electronics and Optics Quantum-Effect Devices Submicron and Nanometer Structures Technology and Research |
| Series/Report no.: | Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 134 |
| Keywords: | Submicron Structures Technology, Submicron Structures Research, Nanometer Structures Technology, Nanometer Structures Research, Submicron Structures Laboratory, Microfabrication at Linewidths of 100 nm and Below, Improved Mask Technology for X-Ray Lithography, Electron Transport in Si MOSFETs with Deep-Submicron Channel Lengths, Coulomb Charging in Ultrasmall Semiconductor Devices, Quasi-One-Dimensional Wires in GaAs/AIGaAs Modulation Doped Field-Effect Transistors, Superlattice Formation in GaAs/AIGaAs Modulation Doped Field-Effect Transistors, GaAs Electron Waveguide Devices Fabricated by X-Ray Lithography, Arrays of Field-Effect-Induced Quantum Dots, Planar-Resonant-Tunneling Field-Effect Transistors (PRESTFET), Fabrication of Distributed-Feedback Lasers, Fabrication of Channel-Dropping Filters, Novel Superconducting Tunneling Structures, Submicrometer-Period Transmission Gratings for X-Ray Spectroscopy, Submicrometer-Period Transmission Gratings for X-Ray Interferometry, Submicrometer-Period Transmission Gratings for Atom-Beam Spectroscopy, Submicrometer-Period Transmission Gratings for Atom-Beam Interferometry, High-Dispersion, High Efficiency Transmission Gratings for Astrophysical X-Ray Spectroscopy, Submicron-Thickness X-Ray Window Technology, Epitaxy via Surface-Energy-Driven Grain Growth, GaAs Epitaxy on Sawtooth-patterned Si |
Files in this item
| Files | Size | Format | View | |
|---|---|---|---|---|
| RLE_PR_134_01_02s_04.pdf | 13.62Mb |
View/ |
This item appears in the following Collection(s)
All Items in DSpace@MIT are protected by original copyright, with all rights reserved, unless otherwise indicated.
|
|
Contact
MIT Libraries
|