High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFETs) for Telecommunications
Citable URI:
http://hdl.handle.net/1721.1/57201
| Title: | High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFETs) for Telecommunications |
| Author: | del Alamo, Jesús A.; Awanol, Yuji; Bahl, Sandeep R.; Bennett, Brian B.; Leary, Michael H.; Moolji, Akbar A.; Donovan, Kelley S.; Odoardi, Angela R. |
| Publisher: | Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT) |
| Issue Date: | 1991-01-01 |
| Description: | Contains an introduction and a report on one research project. |
| URI: | http://hdl.handle.net/1721.1/57201 |
| Other Identifiers: | RLE_PR_134_01_01s_02 |
| Is Part Of | Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1991 Solid State Physics, Electronics and Optics Materials and Fabrication High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFETs) for Telecommunications |
| Series/Report no.: | Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 134 |
| Keywords: | High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFETs) for Telecommunications, Quantum-channel InAIAs/n⁺ -InGaAs MIDFETs |
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| Files | Size | Format | View | |
|---|---|---|---|---|
| RLE_PR_134_01_01s_02.pdf | 4.304Mb |
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