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High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFETs) for Telecommunications

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dc.contributor.author del Alamo, Jesús A. en_US
dc.contributor.author Awanol, Yuji en_US
dc.contributor.author Bahl, Sandeep R. en_US
dc.contributor.author Bennett, Brian B. en_US
dc.contributor.author Leary, Michael H. en_US
dc.contributor.author Moolji, Akbar A. en_US
dc.contributor.author Donovan, Kelley S. en_US
dc.contributor.author Odoardi, Angela R. en_US
dc.date.accessioned 2010-07-16T04:32:51Z
dc.date.available 2010-07-16T04:32:51Z
dc.date.issued 1991-01-01 to 1991-12-31 en_US
dc.identifier RLE_PR_134_01_01s_02 en_US
dc.identifier.uri http://hdl.handle.net/1721.1/57201
dc.description Contains an introduction and a report on one research project. en_US
dc.description.sponsorship Charles S. Draper Laboratories, Inc. Contract DL-H-418488 en_US
dc.description.sponsorship Fujitsu Laboratories en_US
dc.description.sponsorship Joint Services Electronics Program Contract DAAL03-89-C-0001 en_US
dc.description.sponsorship Joint Services Electronics Program Contract DAAL03-92-C-0001 en_US
dc.description.sponsorship Texas Instruments en_US
dc.language.iso en en_US
dc.publisher Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT) en_US
dc.relation.ispartof Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1991 en_US
dc.relation.ispartof Solid State Physics, Electronics and Optics en_US
dc.relation.ispartof Materials and Fabrication en_US
dc.relation.ispartof High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFETs) for Telecommunications en_US
dc.relation.ispartofseries Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 134 en_US
dc.rights Copyright (c) 2008 by the Massachusetts Institute of Technology. All rights reserved. en_US
dc.subject.other High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFETs) for Telecommunications en_US
dc.subject.other Quantum-channel InAIAs/n⁺ -InGaAs MIDFETs en_US
dc.title High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFETs) for Telecommunications en_US
dc.type Technical Report en_US


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