High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFETs) for Telecommunications
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| dc.contributor.author | del Alamo, Jesús A. | en_US |
| dc.contributor.author | Awanol, Yuji | en_US |
| dc.contributor.author | Bahl, Sandeep R. | en_US |
| dc.contributor.author | Bennett, Brian B. | en_US |
| dc.contributor.author | Leary, Michael H. | en_US |
| dc.contributor.author | Moolji, Akbar A. | en_US |
| dc.contributor.author | Donovan, Kelley S. | en_US |
| dc.contributor.author | Odoardi, Angela R. | en_US |
| dc.date.accessioned | 2010-07-16T04:32:51Z | |
| dc.date.available | 2010-07-16T04:32:51Z | |
| dc.date.issued | 1991-01-01 to 1991-12-31 | en_US |
| dc.identifier | RLE_PR_134_01_01s_02 | en_US |
| dc.identifier.uri | http://hdl.handle.net/1721.1/57201 | |
| dc.description | Contains an introduction and a report on one research project. | en_US |
| dc.description.sponsorship | Charles S. Draper Laboratories, Inc. Contract DL-H-418488 | en_US |
| dc.description.sponsorship | Fujitsu Laboratories | en_US |
| dc.description.sponsorship | Joint Services Electronics Program Contract DAAL03-89-C-0001 | en_US |
| dc.description.sponsorship | Joint Services Electronics Program Contract DAAL03-92-C-0001 | en_US |
| dc.description.sponsorship | Texas Instruments | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT) | en_US |
| dc.relation.ispartof | Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1991 | en_US |
| dc.relation.ispartof | Solid State Physics, Electronics and Optics | en_US |
| dc.relation.ispartof | Materials and Fabrication | en_US |
| dc.relation.ispartof | High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFETs) for Telecommunications | en_US |
| dc.relation.ispartofseries | Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 134 | en_US |
| dc.rights | Copyright (c) 2008 by the Massachusetts Institute of Technology. All rights reserved. | en_US |
| dc.subject.other | High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFETs) for Telecommunications | en_US |
| dc.subject.other | Quantum-channel InAIAs/n⁺ -InGaAs MIDFETs | en_US |
| dc.title | High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFETs) for Telecommunications | en_US |
| dc.type | Technical Report | en_US |
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| Name | Size | Format | Description |
|---|---|---|---|
| RLE_PR_134_01_01s ... | 4.104Mb |
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