| Title: | Submicron and Nanometer Structures Technology and Research |
| Author: | Smith, Henry I.; Aucoin, Richard J.; Carter, James M.; Chu, William; Fleming, Robert C., Jr.; Ghanbari, Reza A.; Gupta, Nitin; Hector, Scott D.; Li, Huiying; Moel, Alberto M.; Schattenburg, Mark L.; Wong, Vincent V.; Ferrera, Juan; Lim, Michael H. Y.; Mondol, Mark K.; Frankel, Robert; Shah, Satyen N.; Antoniadis, Dimitri A.; Chung, James E.; Fang, Hao; Hu, Hang; Eugster, Cristopher C.; Kumar, Arvind; Orlando, Terry P.; Rooks, Michael J.; Burkhardt, Martin; del Alamo, Jesús A.; Chou, Michael T.; Shayegan, M.; Sang-hun, Song; Tsui, Daniel; Yee, Kenneth; Zhao, Yang; Choi, Woo-Young; Fonstad, Clifton G., Jr.; Damask, Jay N.; Haus, Hermann A.; Kolodziejski, Leslie A.; Chu, Jack; Graybeal, John M.; Meyerson, Bernard S.; Rittenhouse, George E.; Lew, Julie C.; Canizares, Claude R.; Ismail, Khalid; Karam, Nasser |
| Publisher: | Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT) |
| Issue Date: | 1992-01-01 |
| Description: | Contains reports on twenty research projects and a list of publications. |
| URI: | http://hdl.handle.net/1721.1/57219 |
| Other Identifiers: | RLE_PR_135_01_02s_04 |
| Is Part Of | Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1992 Solid State Physics, Electronics and Optics Quantum-Effect Devices Submicron and Nanometer Structures Technology and Research |
| Series/Report no.: | Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 135 |
| Keywords: | Submicron Structures Technology, Submicron Structures Research, Nanometer Structures Technology, Nanometer Structures Research, Submicron Structures Laboratory, X-Ray Nanolithography, Improved Mask Technology for X-Ray Lithography, Improved Scanning Electron Beam Lithography, High-Precision Mask Alignment Scheme, Achromatic Holographic Lithography, Fabrication of T-gate Devices using X-ray Lithography, Tenth-micron MOSFET Device Technology, Coulomb Charging Effects in Semiconductor Nanostructures, Quasi-One-Dimensional Wires in GaAs/AIGaAs Modulation Doped Field-Effect Transistors, Planar-Resonant-Tunneling Field-Effect Transistors (PRESTFET), Dual Electron Waveguide Device Fabricated Using X-ray Lithography, Far-Infrared Spectroscopy of Arrays of Quantum Dots, Far-Infrared Spectroscopy of Arrays of Quantum Wires, Ridge-Grating Distributed-Feedback Lasers Fabricated by X-Ray Lithography, Channel-Dropping Filters Fabricated by X-Ray Lithography, Novel Superconducting Tunneling Structures, Submicrometer-Period Transmission Gratings for X-ray Spectroscopy, Submicrometer-Period Transmission Gratings for X-ray Interferometry, Submicrometer-Period Transmission Gratings for Atom-Beam Spectroscopy, Submicrometer-Period Transmission Gratings for Atom-Beam Interferometry, High-Dispersion, High-Efficiency Transmission Gratings for Astrophysical X-ray Spectroscopy, Submicron-Thickness X-ray Window Technology, GaAs Epitaxy on Sawtooth-Patterned Silicon |
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| RLE_PR_135_01_02s_04.pdf | 8.633Mb |
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