Physics of InAIAs/InGaAs Heterostructure Field-Effect Transistors
Citable URI:
http://hdl.handle.net/1721.1/57250
| Title: | Physics of InAIAs/InGaAs Heterostructure Field-Effect Transistors |
| Author: | del Alamo, Jesús A.; Bahl, Sandeep R.; Moolji, Akbar A.; Cudjoe-Flanders, Charmaine A.; Odoardi, Angela R. |
| Publisher: | Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT) |
| Issue Date: | 1993-01-01 |
| Description: | Contains an introduction, reports on two research projects and a list of publications and conference papers. |
| URI: | http://hdl.handle.net/1721.1/57250 |
| Other Identifiers: | RLE_PR_136_01_01s_02 |
| Is Part Of | Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1993 Solid State Physics, Electronics and Optics Materials and Fabrication Physics of InAIAs/InGaAs Heterostructure Field-Effect Transistors |
| Series/Report no.: | Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 136 |
| Keywords: | Physics of InAIAs/InGaAs Heterostructure Field-Effect Transistors, Physics of Breakdown in InAIAs/InGaAs MODFETs, Impact Ionization in InAIAs/InGaAs HFETs |
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| RLE_PR_136_01_01s_02.pdf | 550.6Kb |
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