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dc.contributor.advisorKaren K. Gleason.en_US
dc.contributor.authorTrujillo, Nathan J. (Nathan Jeffrey)en_US
dc.contributor.otherMassachusetts Institute of Technology. Dept. of Chemical Engineering.en_US
dc.date.accessioned2011-04-04T21:21:37Z
dc.date.available2011-04-04T21:21:37Z
dc.date.copyright2010en_US
dc.date.issued2010en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/62139
dc.descriptionThesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Chemical Engineering, 2010.en_US
dc.descriptionCataloged from PDF version of thesis.en_US
dc.descriptionIncludes bibliographical references.en_US
dc.description.abstractThe new millennium has brought fourth many technological innovations made possible by the advancement of high speed integrated circuits. The materials and energy requirements for a microchip is orders of magnitude higher than that of "traditional" goods, and current materials management requirements for EHS friendly low-k processing require a 10% annual increase in raw materials utilization. Initiated Chemical Vapor Deposition (iCVD) is a low-energy, one step, solvent-free process for producing polymeric thin films This thesis describes the deposition of a novel low-k iCVD precursor, 1,3,5,7-tetravinyltetramethylcylcotetrasiloxane (V4D4). The high degree of organic content in the as-deposited film affords the ability to tune the film's properties by annealing. The incorporation of atmospheric oxygen at high temperatures enhances the mechanical and electrical properties of the films. Films annealed at 410'C have a dielectric constant of 2.15, hardness and modulus of 0.78 GPa and 5.4 GPa, respectively. These values are comparatively better than previously reported results for CVD low-k films. Environmentally friendly low-k processing encompasses materials and energy management in the entire integration process, including lithography. Colloidal lithography was combined with iCVD and capillary force lithography to create spatially addressable grafted polymer pattern nanostructures, without the need for expensive lithography tools. Using this method, we pattern our novel low dielectric constant polymer down to 25 nm without the need for environmentally harmful solvents. Furthermore, these grafted patterns were produced for a broad material set of functional organic, fluorinated, and silicon containing polymers. A variation of this process created amine functionalized biocompatible conducting polymer nanostructure patterns for biosensor applications. These were fabricated using grafting reactions between oxidative chemical vapor deposition (oCVD) PEDOT conducting polymers and amine functionalized polystyrene (PS) colloidal templates. Carboxylate containing oCVD copolymer patterns were used to immobilized fluorescent dyes. Fluorescent colloidal particles were assembled within dyed PEDOT-co-TAA copolymer nanobowl templates to create bifunctional patterns for optical data storage applications. Finally, UV and e-beam lithography were used to pattern covalently tethered vinyl monolayers for resist-free patterning of iCVD and oCVD polymers, using environmentally innocuous solvents.en_US
dc.description.statementofresponsibilityby Nathan J. Trujillo.en_US
dc.format.extent216 p.en_US
dc.language.isoengen_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsM.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582en_US
dc.subjectChemical Engineering.en_US
dc.titleEnvironmentally focused patterning and processing of polymer thin films by initiated chemical vapor deposition (iCVD) and oxidative chemical vapor deposition (oCVD)en_US
dc.title.alternativeEnvironmentally focused patterning and processing of polymer thin films by iCVD and oCVDen_US
dc.typeThesisen_US
dc.description.degreePh.D.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Chemical Engineering
dc.identifier.oclc708254386en_US


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