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Degradation study of AIGaN/GaN HEMT through electro-thermo-mechanical calculations and thermo-reflectance measurements

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dc.contributor.advisor Tomás Palacios. en_US
dc.contributor.author Gao, Feng, S.M. Massachusetts Institute of Technology en_US
dc.contributor.other Massachusetts Institute of Technology. Dept. of Materials Science and Engineering. en_US
dc.date.accessioned 2011-05-09T15:19:18Z
dc.date.available 2011-05-09T15:19:18Z
dc.date.copyright 2010 en_US
dc.date.issued 2010 en_US
dc.identifier.uri http://hdl.handle.net/1721.1/62683
dc.description Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2010. en_US
dc.description Cataloged from PDF version of thesis. en_US
dc.description Includes bibliographical references (p. 75-78). en_US
dc.description.abstract During the last few years, AIGaN/GaN high electron mobility transistors (HEMTs) have been intensively studied for high frequency high power applications. In spite of this great interest, device reliability is still an important challenge for the wide deployment of AIGaN/GaN HEMT technology. To fully understand reliability in these devices, it is necessary to consider the electrical, mechanical and thermal properties of the operating AIGaN/GaN transistors. Since AIGaN and GaN are both piezoelectric materials, the coupling among electric field, lattice heating and mechanical characteristics gives rise to large changes in strain field and elastic energy density in the transistors under the pinch-off conditions. Most previous work have studied the inverse piezoelectric effect on device degradations, however, quantitative analysis of this failure mechanism is still needed. In this thesis, we have developed the first fully-coupled electro-thermo-mechanical simulation of AIGaN/GaN HEMTs to study the correlation between the critical voltages of the gate current degradation and the lattice temperature distributions of these devices under the reverse-gate-bias reliability testing. In addition, we have compared the numerical results of our simulations with DC measurements and high resolution thermo-reflectance images, obtaining excellent agreement for both of them. Moreover, our studies suggest a covenient and low-cost way to obtain the reliability characteristics of AIGaN/GaN HEMTs by using the thermo-reflectance measurements of the lattice temperature distributions for those devices. en_US
dc.description.statementofresponsibility by Feng Gao. en_US
dc.format.extent 78 p. en_US
dc.language.iso eng en_US
dc.publisher Massachusetts Institute of Technology en_US
dc.rights M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. en_US
dc.rights.uri http://dspace.mit.edu/handle/1721.1/7582 en_US
dc.subject Materials Science and Engineering. en_US
dc.title Degradation study of AIGaN/GaN HEMT through electro-thermo-mechanical calculations and thermo-reflectance measurements en_US
dc.title.alternative Degradation study of AIGaN/GaN high electron mobility transistors through electro-thermo-mechanical calculations and thermo-reflectance measurements en_US
dc.type Thesis en_US
dc.description.degree S.M. en_US
dc.contributor.department Massachusetts Institute of Technology. Dept. of Materials Science and Engineering. en_US
dc.identifier.oclc 714363478 en_US


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